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October 26 to October 30, 2009

The NIST Technicalendar is issued each Friday. All items MUST be submitted electronically from this web page by 12:00 NOON each Wednesday unless otherwise stated in the NIST Technicalendar. The address for online weekly editions of the NIST Technicalendar and NIST Administrative Calendar is: http://www.nist.gov/tcal.

In this Issue:
Meetings at NIST
Meetings Elsewhere
Announcements
Talks by NIST Personnel
NIST Web Site Announcements
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NIST Vacancy Announcements (current)
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AT A GLANCE - MEETINGS AT NIST

MONDAY - 10/26
10:30 AM -
TUESDAY - 10/27
11:00 AM - Future Challenges for the Industry of Organic Photovoltaics
2:00 PM - Model-based white light interference microscopy for metrology of transparent film stacks and optically-unresolved structures
WEDNESDAY - 10/28
12:00 PM - In-Situ Analytical Electron Microscopy: Integrated Platform for Characterization, Testing and Processing of Materials in the 21st Century
2:00 PM - Making Workplace Accommodations with the help of JAN
THURSDAY - 10/29
1:30 PM - MAGNETOELECTRIC EFFECT IN MULTIFERROIC OXIDES: A PEDAGOGICAL OVERVIEW
FRIDAY - 10/30
10:30 AM - Micromechanical Principles in Sintering And It's Verification By Using MEMS-Inspired Experimental Method
10:30 AM - Innovations in Semiconductor Devices for Exascale Computing
10:30 AM - "An Overview of Health Sciences Authority and the Chemical Metrology Programme"
2:00 PM - CNST Nanofabrication Research Group Seminar

MEETINGS AT NIST

10/26 -- MONDAY

10:30 AM - PHYSICS LABORATORY SEMINAR:
Wei Shi , Associate Professor of Optical Sciences at the University of Arizona. Arturo Chavez-Pirson , Associate Professor of Optical Sciences at the University of Arizona..
221 Bldg, Rm. B145. (NIST Contact: Raju Datla, 301-975-2131, raju.datla@nist.gov)



10/27 -- TUESDAY

11:00 AM - POLYMERS DIVISION SEMINAR: Future Challenges for the Industry of Organic Photovoltaics
Since the discovery of ultrafast photoinduced electron transfer from a conjugated polymer to a C60 molecule, the scientific field of Organic Photovoltaics (OPV) has been growing exponentially. In 2009, the first products developed by Konarka have entered the marketplace. These photovoltaic modules, produced with a high speed, low temperature, roll-to-roll machine, onto a flexible, light weight polymeric substrate, offer completely new ways of utilizing the sun's energy. Efficiencies higher than 6 % and lifetimes longer than 5 years have been recently shown. But the performance of OPV technology must increase even further to enter new applications. During this talk, we will present some of the important scientific challenges, and discuss them from an industrial perspective
Gilles Dennler , Director of Research, Konarka Technologies Inc.
224 Bldg, Rm. A312. (NIST Contact: Dean DeLongchamp, 301-975-5599, deand@nist.gov)


2:00 PM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Model-based white light interference microscopy for metrology of transparent film stacks and optically-unresolved structures
White light interferometry has evolved from a high-precision tool for 3D surface-topography to a multi-functional platform for surface structure analysis. The drivers for this evolution are the increased complexity and shrinking feature size of high-volume production components such as semiconductor wafers, flat panel displays, data storage components and MEMS. The enabling technology is interferometry combined with advanced computer analysis, including detailed instrument modeling, complex reflectivity analysis for transparent films and rigorous coupled wave analysis (RCWA) for optically-unresolved features. I present here the principles and several practical examples of measurements of multi-layer dielectric and metallic film stacks and shape parameters for surface features smaller than 50nm wide using visible-wavelength interferometry. I also show how these data may be combined with 3D surface topography for a complete surface structure analysis.
Peter de Groot , Director, Research & Development, Zygo Corp, Middlefield, CT. Xavier Colonna de Lega , Senior Research Scientist. Zygo Corp., Middlefield, CT.
BLDG. 217, RM. H107. (NIST Contact: Gregg Gallatin, 301-975-2140, gregg.gallatin@nist.gov)



10/28 -- WEDNESDAY

12:00 PM - METALLURGY DIVISION SEMINAR: In-Situ Analytical Electron Microscopy: Integrated Platform for Characterization, Testing and Processing of Materials in the 21st Century
Vladimir Oleshko , University of Arizona, Tucson, AZ.
Materials Bldg, Rm. B351. (NIST Contact: Leonid Bendersky, 301-975-6167, leonid.bendersky@nist.gov)


2:00 PM - CIVIL RIGHTS AND DIVERSITY DIVISION SEMINAR: Making Workplace Accommodations with the help of JAN
JAN provides free consulting services for federal employers, including one-on-one consultation about all aspects of job accommodations, compliance assistance with section 501 of the Rehabilitation Act, information about federal initiatives and hiring programs, and referral to federal resources.
Anne Hirsh , Director of JAN.
Administration Bldg, Lecture Rm. D. (NIST Contact: Jeremy Lawson, 301-975-9578, jeremy.lawson@nist.gov) http://www.jan.wvu.edu/empl/index.htm#fed
Special Assistance Available



10/29 -- THURSDAY

1:30 PM - CNST ELECTRON PHYSICS GROUP SEMINAR: MAGNETOELECTRIC EFFECT IN MULTIFERROIC OXIDES: A PEDAGOGICAL OVERVIEW
In this talk, I will review the physics of multiferroicity in single phase oxide materials (e.g. BiMeO3 (Me= Fe, Mn) and FeTiO3 and the mechanism of coupling between two order parameters-polarization P and magnetization M -in them. These materials offer an opportunity to study the manipulation of magnetic moments by external voltages. I will then discuss the current understandings and challenges in this field and if time permits, dwell upon another area of multiferroics namely oxide heterostructures where multiferroicity and magnetic-electric coupling occur as an interfacial emergent phenomena.
Bhagawan Sahu , Research Physicist/Microelectronics Research Center, University of Texas, Austin.
Bldg.217, Rm.H107. (NIST Contact: Mark Stiles, 301-975-3745, mark.stiles@nist.gov)



10/30 -- FRIDAY

10:30 AM - CERAMICS DIVISION SEMINAR: Micromechanical Principles in Sintering And It's Verification By Using MEMS-Inspired Experimental Method
The macroscopic shrinkage in sintering results from microscopic particle motions that are driven by the sum of the external force and the internal thermodynamic driving force, i.e., the sintering force. A particle interacts with its neighbor particles at grain boundaries, and the relative motion between two particles is a superposition of translation and rotation, which is driven by the torque induced by the orientation dependence of grain boundary energy. We are developing an experimental technique for the sintering of sintering of two microscale particles using focused ion beam machining. The evolution of the sintering couples in thin Au foils after different annealing times gives information about the sintering force and the torque, then, we can evaluate the grain boundary energy and the grain boundary diffusion coefficient of various types of grain boundaries. This knowledge will be useful to predict the anisotropic shrinkage, because the macroscopic shrinkage of a component is influenced by anisotropy in both surface energy and grain boundary diffusion coefficient, when the crystalline orientation distribution is anisotropic.
Fumihiro Wakai , Tokyo Institute of Technology.
Materials Bldg, Rm. A250. (NIST Contact: Sheldon Wiederhorn, 301-975-5772, sheldon.wiederhorn@nist.gov)


10:30 AM - NIST COLLOQUIUM SERIES: Innovations in Semiconductor Devices for Exascale Computing
The continuous scaling of CMOS device technology has enabled system performance to double every two years for the past 40 years. However, emerging classes of applications for which network-speed processing and data-intensive modeling are integral components will demand a much faster rate of improvement, such as 2x/year in order to reach exaflop capabilities (100x-1000x over present systems) by the end of the next decade. These applications require continued innovation to increase intrinsic transistor performance/power and density. New system architectures will take advantage of 3D chip technology to enable a higher level of hybrid integration, new memory technology such as Phase Change Memory (PCM) will allow implementation of a new level of memory architecture, and silicon photonics on the processor will meet ultra-low power, low cost and high density communications needs. These and other innovations will lead to significant improvement in systems integration, performance, and power efficiency.
Tze-chiang (T.C.) Chen , IBM Fellow and Vice President of Science & Technology, IBM Watson Research Center, Yorktown Heights.
Administration Building, Green Auditorium. (NIST Contact: Kum Ham, 301-975-4203, kham@nist.gov)
Special Assistance Available


10:30 AM - CHEMICAL SCIENCE AND TECHNOLOGY LABORATORY OFFICE SEMINAR: "An Overview of Health Sciences Authority and the Chemical Metrology Programme"
Tong Kooi Lee , Division Director, Chemical Metrology Division, Health Sciences Authority, Singapore.
101 Bldg, Lecture Room A. (NIST Contact: Willie May, 301-975-8300, wme@nist.gov)


2:00 PM - CENTER FOR NANOSCALE SCIENCE AND TECHNOLOGY SEMINAR: CNST Nanofabrication Research Group Seminar
The ongoing quest for semiconductor lasers with low threshold current has led to the development of new materials (e.g., quantum wires and dots) and new optical resonators (e.g., microdisks and photonic bandgap crystals). In a novel approach to ``thresholdless" lasers, we have developed a new growth technique for self-assembled deep-centers in the technologically important semiconductor gallium-arsenide. We recently demonstrated the first gallium-arsenide deep-center laser. These lasers, which intentionally utilize gallium-arsenide deep-center transitions, exhibited a threshold current density of less than 2A/cm2 with electrical injection in continuous-wave mode at room temperature at the important 1.54um fiber-optic wavelength. Moreover, in contrast to conventional semiconductor devices, whose operating wavelengths are fixed by the bandgap energy, the room-temperature stimulated-emission from gallium-arsenide deep-centers can be tuned very widely from the bandgap (about 900nm) to half-the-bandgap (1600nm). We demonstrated laser action at many wavelengths between 1.2um and 1.6um, which includes fiber-optic wavelengths. We explain the physics of gallium-arsenide deep-center lasers. Biography: At Yale University, Dr. Janet Pan has been a winner of the NSF Career, ONR Young Investigator, and Sheffield Teaching Awards. Dr. Pan has been an Invited Speaker at the March Meeting of the APS, the International Conference on the Physics of Semiconductors, and Photonics West. Dr.Pan received all her degrees from the Massachusetts Institute of Technology. While at MIT, she won the Hertz, NSF, and Rockwell International Graduate Student Fellowships. She was also a winner of the Associate of MIT Alumnae Highest Academic Achievement Award for best female undergraduate student.
Janet Pan , Associate Professor and Research Scientist, Yale University.
Bldg.217, Rm.H107. (NIST Contact: Kartik Srinivasan, 301-975-5938, kartik.srinivasan@nist.gov)



ADVANCE NOTICE

11/5/09 9:00 AM - OFFICE OF SECURITY: Counterintelligence; Indicators of Espionage 2009-2010
November 5, 2009, 9:00 a.m. - 10:00 a.m. Advanced registration requested OSY@NIST.GOV. Walk-ins welcome.
Michael Chandler , Office of the Chief Facilities Management.
Administration Building, Green Auditorium. (NIST Contact: Michael Chandler, 301-975-3305, michael.chandler@nist.gov)


11/6/09 10:30 AM - NIST COLLOQUIUM SERIES: The Triumph of Random
People often misinterpret and misunderstand information and experiences that motivate their decisions and behavior. This is because most of us have a very poor feeling for the concept of randomness. Even for those who understand probability and statistics, it is often difficult to identify and overcome misleading perceptions that influence one's basic instincts. These miscalculations can affect decisions in finance, business, sports, law, and one's private life. How the concept of randomness plays out in these situations will be discussed, as well as some illusions and subtle psychological tools that are often used (or that you yourself can use) to influence decision making. Some audience-participation is included, so bring a pen and some slips of paper. Leonard Mlodinow's national bestselling book, "The Drunkard's Walk: How Randomness Rules Our Lives" will be available for review and purchase after the lecture.
Leonard Mlodinow , Theoretical Physicist, Author, Writer and Producer, California Institute of Technology.
Administration Building, Green Auditorium. (NIST Contact: Kum Ham, 301-975-4203, kham@nist.gov)
Special Assistance Available


11/24/09 10:30 AM - PROCESS MEASUREMENTS DIVISION SEMINAR: PROCESS MEASUREMENTS DIVISION SEMINAR
Proteins are exposed to a multitude of different surfaces and chemistries in vivo and yet, they must retain their stability in order to function. However, conversion of soluble native proteins into beta-sheet-rich structured aggregates, such as amyloid and prion deposits can occur at interfaces. Protein stability and activity is also essential for use in various medical and analytical devices, such as biosensors, biocatalytic chips, biomaterials for implants, drug delivery vehicles, tissue engineering, and bioseparations (affinity adsorption). Although a vast experimental literature exists on the adsorption of specific proteins to various solid substrates under defined conditions, difficulties in determining the underlying reasons for the loss of stability and function remain. Many researchers have addressed particular aspects of protein behavior at interfaces through experiment, theory and molecular simulation. Here, we review recent results on protein stability and activity on solid heterogeneous and homogeneous substrates including nano-particles, demonstrate the effect of surface chemistry and roughness on protein aggregation, and describe a novel method to probe unfolding of a monolayer of tethered proteins. We also mention the use of single molecule force spectroscopy to determine molecular interactions in the nuclear pore complex (NPC). Tethered fibril-like proteins that contain intrinsically disordered domains interact with carrier proteins that determine selectivity. Finally, we introduce a new high-throughput method for identifying protein resistant surfaces.
Georges Belfort , Russell Sage Professor, Rensselaer Polytechnic Institute, Troy, NY, belfog@rpi.edu.
Physics Bldg, Rm. A366. (NIST Contact: Michael Tarlov, 301-975-2058, michael.tarlov@nist.gov)


12/3/09 10:30 AM - ATOMIC PHYSICS DIVISION SEMINAR: 1/f Noise and Dephasing from Surface Magnetic States in Superconducting Circuits
Superconducting qubits are a leading candidate for scalable quantum information processing. In order to realize the full potential of these circuits, it is necessary to develop a more complete understanding of the microscopic physics that governs dissipation and dephasing of the quantum state. In the case of the Josephson phase and flux qubits, the dominant dephasing mechanism is an apparent low-frequency magnetic flux noise with a 1/f power spectrum. The origin of this excess noise has been an open question for more than 20 years. Here we describe studies of flux noise and temperature-dependent magnetization in Superconducting QUantum Interference Devices (SQUIDs) cooled to millikelvin temperatures. We observe that the flux threading the SQUIDs increases as 1/T as temperature is lowered; moreover, the flux change is proportional to the density of trapped vortices. The data are compatible with the thermal polarization of unpaired surface spins in the trapped fields of the vortices, and suggest a microscopic origin for the 1/f flux noise. In addition we have performed measurements of the temperature- and frequency-dependent complex inductance of dc SQUID circuits. The SQUID inductance displays rich, history-dependent structure as a function of temperature. At a fixed temperature, the SQUID inductance fluctuates with a 1/f power spectrum; the inductance noise is highly correlated with the conventional 1/f flux noise. The data is interpreted in terms of the reconfiguration of clusters of surface spins, w ith correlated fluctuations of effective magnetic moments and relaxation times.
Robert McDermott , Department of Physics, University of Wisconsin-Madison.
Metrology Building, Room B365. (NIST Contact: Neil Zimmerman, 301-975-5887, neil.zimmerman@nist.gov)


12/4/09 1:30 PM - CNST ELECTRON PHYSICS GROUP SEMINAR: STABILITY IN A TURBULENT (FERMI) SEA: THE EVER MORE REMARKABLE HIGH TEMPERATURE SUPERCONDUCTORS
For over two decades high temperature superconductivity has captured the attention of scientists the world round. However, rather than finding a simple explanation for the properties of these materials, as was done for their low temperature cousins half a century ago, intensive research has instead led to an increasingly complex picture of materials characterized by an intricate phase diagram, full of competing or coexisting states, yet still dominated by a superconducting state which persists, at least in some materials, almost half way to room temperature. In this talk I will describe nanoscale investigations of the electronic structure of high temperature superconductors using scanning tunneling microscopy (STM). We have recently found that a still not understood high temperature phase in these materials, the pseudogap, is characterized by strong charge inhomogeneity. Surprisingly, although this disorder persists into the superconducting state, it does not seem to perturb coexisting homogeneous superconductivity. The resolution of this apparent contradiction gives new insight into the onset of superconductivity and its relationship with the pseudogap phase.
Eric Hudson , Professor/Department of Physics, Massachusetts Institute of Technology.
Bldg.217, Rm.H107. (NIST Contact: Joseph Stroscio, 301-975-3716, joseph.stroscio@nist.gov)



MEETINGS ELSEWHERE



10/26 -- MONDAY

11:00 AM - CARNEGIE INSTITUTION OF WASHINGTON/GEOPHYSICAL LAB. SEMINAR: MINERAL SURFACE CONTROLS ON EARLY CELL MEMBRANE EVOLUTION
N. Sahai , Univ. of Wisconsin-Madison.
Bldg, Rm..
Greenewalt Bldg., GL-DTM Grounds, Carnegie Institution of Washington, DC. (NIST Contact: George Cody, 202-478-8900, seminar@lists.ciw.edu)




10/27 -- TUESDAY

7:00 AM - ANNUAL REVIEW OF THE NANOELECTRONICS RESEARCH INITIATIVE (NRI) PROGRAM
If you or someone else you think would be appropriate would like to attend you can register at: http://nri.src.org/_shared/forms/EventReg/OLER.asp?EventID=3456. Registration ends on Oct. 26, 2009.
Jeffrey Welser , Director of the Semiconductor Research Corporation (SRC) Nanoelectronics Research Institute (NRI).
Bldg, Rm..
Wyndham Garden Hotel Gaithersburg, 805 Russell Avenue, Gaithersburg, MD, USA. (NIST Contact: David Seiler, 301-975-2074, david.seiler@nist.gov)




10/28 -- WEDNESDAY

No Scheduled Events

10/29 -- THURSDAY

No Scheduled Events

10/30 -- FRIDAY

No Scheduled Events

ADVANCE NOTICE

No Scheduled Events

TALKS BY NIST PERSONNEL


CURRY, J. : PROGRESS ON RADIATIVE TRANSITION PROBABILITIES IN NEUTRAL CERIUM.
Gaseous Electronics Conference, Saratoga Springs, NY, 10/21.

ANDERSON, I. : MATERIALS ANALYSIS AT OR NEAR ATOMIC RESOLUTION.
University of Oregon Green Chemistry Workshop, McKenzie Bridge, OR, 10/26.

CLARK, C. : OVER THE RAINBOW: EXTREME ADVENTURES IN THE ULTRAVIOLET.
Physics Colloquium, Bucknell University, Lewisburg, PA, 10/26.

ANDERSON, M. : CHARACTERIZATION OF THIN FILM CUCR2SE4 BY A MODULATED ELEMENTAL REACTANT.
University of Oregon, Eugene, Oregon, 10/26.

FONG, J. : ARTIFICIAL INTELLIGENCE TOOLS FOR FAILURE EVENT DATABASE MANAGEMENT AND PROBABILITY RISK ANALYSIS FOR FAILURE PREVENTION.
Materials Science and Technology 2009 Conference, Pittsburgh, PA, 10/27.

LANGER, S. : ANALYZING COMPLEX MICROSTRUCTURES WITH OOF.
Materials Science and Technology 2009 Conference (MS&T09), Pittsburgh, PA, 10/27.

WONG-NG, W. : RECENT METROLOGY RESEARCH OF THERMOELECTRIC MATERIALS AT NIST.
Materials Science and Technology Conference (MS&T09), Pittsburgh, PA, 10/27.

RUST, B. : USING CONFIDENCE ELLIPSOIDS TO CHOOSE THE REGULARIZATION PARAMETER FOR ILL-POSED PROBLEMS.
2009 SIAM Conference on Applied Linear Algebra, Monterey, CA, 10/27.

CASSIDY, A. : THERMALIZATION NEAR INTEGRABILITY IN THE 1D BOSE-HUBBARD MODEL.
University of Maryland Informal Statistical Physics Seminar, College Park, Maryland, 10/27.

CONNY, J. : AN ELECTRON MICROSCOPY STUDY OF FINE AND COARSE AMBIENT AIR PARTICLES COLLECTED AT DIFFERENT TIMES OF THE YEAR FROM THREE MAJOR GEOGRAPHICALLY-DISTINCT URBAN AREAS..
American Associate for Aerosol Research, Hyatt Regency Minneapolis, Minneapolis, MN, 10/28.

CONNY, J. : INVESTIGATING THE STRUCTURE AND COMPOSITION OF URBAN AMBIENT-AIR PARTICLES USING FOCUSED ION-BEAM SCANNING ELECTRON MICROSCOPY..
American Associate for Aerosol Research, Hyatt Regency Minneapolis, Minneapolis, MN, 10/28.

WONG-NG, W. : PHASE RELATION STUDIES OF MATERIALS FOR COATED CONDUCTOR AND WASTE HEAT RECOVERY APPLICATIONS.
Materials Science & Technology Conference (MS&T09), Pittsburgh, PA, 10/28.

LOTT, P. : FAST ITERATIVE SOLVER FOR INCOMPRESSIBLE NAVIER-STOKES EQUATIONS WITH SPECTRAL ELEMENTS.
SIAM Conference on Applied Linear Algebra, Monterey, CA, 10/28.

COFFMAN, V. : OOF: AN IMAGE-BASED FINITE ELEMENT SOLVER FOR MATERIALS SCIENCE.
9th Meeting on Applied Scientific Computing and Tools, Rome, Italy, 10/29.

DELONGCHAMP, D. : STRUCTURE MEASUREMENTS FOR ORGANIC PHOTOVOLTAICS.
University of Texas, Dallas, TX, 10/30.

SHIRLEY, E. : PREDICTING EXCITATION SPECTRA IN SOLIDS: A PRACTICAL BETHE-SALPETER APPROACH.
University of Vienna, Vienna, Austria, 11/11.



ANNOUNCEMENTS


VISITOR REGISTRATION FOR NIST EVENTS
Because of heightened security at the NIST Gaithersburg site, members of the public who wish to attend meetings, seminars, lectures, etc. must first register in advance. For more information please call or e-mail the "NIST Contact" for the particular event you would like to attend.
NIST Contact: . ., ., .


DIVERSITY DAY 4: GENERATIONAL DIVERSITY
Diversity Day 4: Generational Diversity with Robert Wendover Tuesday, November 10, 2009 This event will feature a keynote seminar and staff panel discussion in the morning. Smaller seminars for senior and line management will continue in the afternoon. The schedule is as follows: 9-10 a.m. ET: Generational Diversity Panel Discussion 10:30-11:45 a.m. Red Auditorium Keynote: Managing Age Diversity in Today's Workplace How does a "fifty-something" lead a "twenty-something?" How does a "twenty-something" lead a "fifty-something?" To thrive in this new world, you must understand the values and attitudes of both new and experienced workers. This talk helps you take a realistic, yet amusing look at how the generations relate. 12:30 p.m. Senior Leaders Lunch Session: Succession Planning and the New Generations As Baby Boomers edge closer to retirement, they are being replaced by a cohort of people having a radically different take on leadership. Younger generations will challenge the traditional ways that organizations promote and develop leaders. This a unique program focused on how your enterprise can ensure tomorrow's success by integrating the aspirations of young workers with the wisdom of veteran managers. 2 p.m. – 3:30 p.m. Division Chiefs and Group Leaders Green Auditorium Been There, Done That! Best Practices in Managing Age Diversity Age differences in today's workplace have become a major challenge for supervisors young and old. Veteran managers think young people lack initiative and common sense. Young workers think older employees are stuck in their ways. Young people depend upon technology. Older workers depend upon their experience. This will help you connect with the needs and desires of the diverse generations in your workplace and learn how managers in your industry and others are not just surviving, but thriving with the young talent entering the workforce.
NIST Contact: Jeremy Lawson, 301-975-5481, jeremy.lawson@nist.gov




NIST WEB SITE ANNOUNCEMENTS


No Web Site announcements this week.

For more information, contact Ms. Sharon Hallman, Editor, Stop 2500, National Institute of Standards and Technology, Gaithersburg MD 20899-2500; Telephone: 301-975-TCAL (3570); Fax: 301-926-4431; or Email: tcal@nist.gov.

All lectures and meetings are open unless otherwise stated.

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