NIST Technicalendar October 5 to October 9, 2009 The NIST Technicalendar is issued each Friday. All items MUST be submitted electronically from this web page by 12:00 NOON each Wednesday unless otherwise stated in the NIST Technicalendar. The address for online weekly editions of the NIST Technicalendar and NIST Administrative Calendar is: http://www.nist.gov/tcal.

In this Issue: Meetings at NIST Meetings Elsewhere Announcements Talks by NIST Personnel NIST Web Site Announcements NIST Administrative Calendar (current)   NIST Vacancy Announcements (current)

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No Scheduled Events

No Scheduled Events

10:45 AM - Local Structure Studies in Systems with First and Second Order Jahn-Teller Distortions

No Scheduled Events

10:30 AM - NIST Portrait Ceremony October 9, 2009

10/5 -- MONDAY

No Scheduled Events

10/6 -- TUESDAY

No Scheduled Events

10/7 -- WEDNESDAY

10:45 AM - NIST CENTER FOR NEUTRON RESEARCH SEMINAR: Local Structure Studies in Systems with First and Second Order Jahn-Teller Distortions
Jahn-Teller distortions -- first or second order, local or cooperative -- play a crucial role in determining the ground states of a number of different functional oxide materials. We have for many years been fascinated by the phenomenon of second order Jahn-Teller distortions in crystalline systems containing ions such as Pb2+ and Bi3+, that possess stereochemically active lone pairs. The talk will develop the theme of lone pairs and the role they play in determining structure and dielectric properties. The question of whether certain structural topologies (most notably the pyrochlore structure) can frustrate cooperative ordering of lone pairs (second order Jahn-Teler distortions) will be probed. Finally, the spinel compound CuMn2O4, which contains two Jahn-Teller active ions, will be probed from a local structure perspective.
Ram Sesahdri , University of California. ,.
235 Bldg, Rm. E100. (NIST Contact: Efrain Rodriguez, 301-975-8490, efrain.rodriguez@nist.gov)


10/8 -- THURSDAY

No Scheduled Events

10/9 -- FRIDAY

10:30 AM - NIST PORTRAIT CEREMONY: NIST Portrait Ceremony October 9, 2009
NIST staff and alumni are invited to the ceremony adding nine portraits to the NIST Gallery of Distinguished Scientists, Engineers and Administrators in the Red Auditorium on Friday, October 9, 2009, at 10:30 a.m. The honorees are James Albus, MEL; Richard Durst, CSTL; Keith Eberhardt, ITL; Richard Fields, MSEL; J. William Gadzuk, PL; Frances Loomis Lloyd, EEEL; H. Steffen Peiser, OD; Tawfik Raby, NCNR; and John Stephenson, PL. The ceremony is an opportunity for all of NIST to observe and celebrate the accomplishments that have been achieved in outstanding NIST careers. It is a particularly good opportunity for younger staff to gain perspective on the variety, magnitude and influence of their career opportunities at NIST. Their families, friends and colleagues are invited to join the honorees in a breakfast reception in the Former Senior Lunch Club at 9:30 a.m. on October 9.
. . , ..
Administration Building, Red Auditorium. (NIST Contact: Hans Oser, 301-975-2486, hans.oser@nist.gov)


ADVANCE NOTICE

10/13/09 10:30 AM - QUANTUM ELECTRICAL METROLOGY DIVISION SEMINAR: Graphene: Physics, Materials and Devices
Graphene is the building block of many carbon materials and an ultimate, flexible 2D electron system with novel properties and many potential applications in nanotechnology. In this talk, I will discuss recent work in my group exploring the physics, materials and devices of graphene. The following topics may be covered: (1) The carriers in graphene can be tuned from p-type to n-type (so called "ambipolar field effect") through a charge neutral "Dirac point" (DP). We study the nature of the electronic state near the DP through scanning probe as well as magneto transport measurements. We discuss the evolution of carrier distribution and quantum Hall states near the DP, and a magnetic-field-induced insulating phase. (2) Being an exposed, one-atom-thick quantum material, graphene is sensitive to environmental perturbations. We are developing a radiation detector based on the ambipolar field effect of graphene. We have also studied the interaction of energetic charged particles with graphene and effects of the artificially created defects. (3) Finally, I will discuss the development of wafer-scale graphene synthesized by chemical vapor deposition on various substrates, and the study of their electronic properties, such as quantum Hall effects.
Yong Chen , Assistant Professor, Purdue University.
220 Bldg, Rm. B165. (NIST Contact: David Newell, 301-975-4228, david.newell@nist.gov)

10/13/09 10:30 AM - CNST ENERGY RESEARCH GROUP SEMINAR: Metal-insulator Transition in Thin Film Vanadium Dioxide
The phenomenon of metal-insulator phase transition in strongly correlated electron systems is one of the focus areas of research in condensed matter physics. The interest is partly motivated by the potential of the materials exhibiting a metal-insulator transition to be used in novel electronics and electro-optic applications as switches or memory elements. There is also considerable interest in understanding the fundamental science behind the correlated electron behavior responsible for striking material property changes such as high temperature superconductivity, metal-insulator transition, and colossal magnetoresistance. Vanadium dioxide has received special attention because of the substantial scale of the metal-insulator transition in this material, the fact that the transition temperature is near room temperature (67°C), and extremely fast optical switching upon the transition (~100 fs). I will present the results of our comprehensive study of vanadium dioxide (VO2) using a range of photon irradiation and electrical characterization techniques with the focus on the metal-insulator transition (MIT) in this material. Bulk thin film VO2 was investigated by means of synchrotron x-ray absorption and photoemission spectroscopy across the metal-insulator transition (MIT). The manifestation of MIT is observed in the unoccupied (x-ray absorption spectra) and occupied (photoemission spectra) density of states near the Fermi level. The energy band structure measurements are directly correlated to electron transport data for a set of vanadium oxide films with varying V-O stoichiometry. The optical studies of VO2 films revealed record high switching of the mid-infrared reflectance upon MIT and provided the evidence of the percolative nature of the phase transition. Our Hall effect experiments allowed determining the carrier density and electron mobility across the MIT – important parameters in the Mott theory of MIT. Our recent experiments on VO2 nano-junctions showed the scaling of the MIT effect by voltage triggering down to 200nm devices. Possible applications in electronics and our current experiments with VO2 devices will be outlined.
Dmitry Ruzmetov , Postdoctoral Fellow in Applied Physics, Harvard University.
Bldg.217, Rm.H107. (NIST Contact: Albert Talin, 301-975-8004, albert.talin@nist.gov)

10/14/09 10:30 AM - PROCESS MEASUREMENTS DIVISION SEMINAR: PROCESS MEASUREMENTS DIVISION SEMINAR
High-Throughput Analysis of Protein Self-Association as a Guide for Understanding and Manipulating Protein Self-Assembly Weak protein interactions impact an array of biological phenomena, ranging from cell signaling and intracellular protein condensation to protein crystallization and the aggregation of protein therapeutics. Therefore, there is intense interest in understanding and controlling these interactions via systematic, high-throughput analysis of protein self-association. Since conventional biophysical methods capable of measuring protein self-interactions are low throughput, we are developing new methods of characterizing weak protein interactions (peptide microarrays and nanoparticle-based assays) for hundreds of samples in a near simultaneous manner. In this presentation, we will discuss these high-throughput assays and their use in deciphering the molecular determinants of diverse protein condensation and aggregation phenomena, ranging from prions and amyloids to antibodies. We will also discuss how our findings address several outstanding biological questions, including how prions establish and overcome species barriers, and how aggregation-resistant antibodies can be engineered in a rational manner.
Pete Tessier , Assistant Professor, Dept. of Chemical & Biological Engineering at Rensselaer Polytechnic Institute, Troy, NY, tessier@rpi.edu.
Physics Bldg, Rm. B145. (NIST Contact: Michael Tarlov, 301-975-2058, michael.tarlov@nist.gov)

10/16/09 1:00 PM - NIST COLLOQUIUM SERIES: Global Potential for Wind-Generated Electricity
Note: Videocast from Boulder The potential of wind power as a global source of electricity is assessed by assimilating wind data from a variety of meteorological sources. The analysis indicates that a network of land-based 2.5-megawatt (MW) turbines restricted to nonforested, ice-free, non-urban areas operating at as little as 20% of their rated capacity could supply 40 times current worldwide consumption of electricity and 5 times total global use of energy in all forms. Resources in the contiguous United States, specifically in the central plain states, could accommodate as much as 16 times the total current demand for electricity in the United States.
Michael McElroy , Department of Earth and Planetary Sciences, Harvard University.
Administration Building, Green Auditorium. (NIST Contact: Kum Ham, 301-975-4203, kham@nist.gov)
Special Assistance Available

10/23/09 10:30 AM - ATOMIC PHYSICS DIVISION SEMINAR: Material and Electrical Characterization for Qubit Devices
Silicon Quantum Dot fabrication for Qubits requires a minimum of defects to produce clean quantum dots and barriers. Identifying sources of defects in the process flow is critical for this goal. We can both i) characterize oxide quality with C-V and mobility measurements to improve fabrication processes, and ii) provide quantitative estimates of the defects, which provides guidance to design and modeling efforts. In this presentation, we report on the impact of several critical process steps, including poly-Si etch, top gate metallization, atomic layer deposition of dielectrics, and various anneals.
Greg Ten Eyck , Sandia National Labs.
Physics Building, Room B145. (NIST Contact: Neil Zimmerman, 301-975-5887, neil.zimmerman@nist.gov)

10/27/09 2:00 PM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Model-based white light interference microscopy for metrology of transparent film stacks and optically-unresolved structures
White light interferometry has evolved from a high-precision tool for 3D surface-topography to a multi-functional platform for surface structure analysis. The drivers for this evolution are the increased complexity and shrinking feature size of high-volume production components such as semiconductor wafers, flat panel displays, data storage components and MEMS. The enabling technology is interferometry combined with advanced computer analysis, including detailed instrument modeling, complex reflectivity analysis for transparent films and rigorous coupled wave analysis (RCWA) for optically-unresolved features. I present here the principles and several practical examples of measurements of multi-layer dielectric and metallic film stacks and shape parameters for surface features smaller than 50nm wide using visible-wavelength interferometry. I also show how these data may be combined with 3D surface topography for a complete surface structure analysis.
Peter de Groot , Director, Research & Development, Zygo Corp, Middlefield, CT. Xavier Colonna de Lega , Senior Research Scientist. Zygo Corp., Middlefield, CT.
BLDG. 217, RM. H107. (NIST Contact: Gregg Gallatin, 301-975-2140, gregg.gallatin@nist.gov)

10/30/09 2:00 PM - CENTER FOR NANOSCALE SCIENCE AND TECHNOLOGY SEMINAR: CNST Nanofabrication Research Group Seminar
The ongoing quest for semiconductor lasers with low threshold current has led to the development of new materials (e.g., quantum wires and dots) and new optical resonators (e.g., microdisks and photonic bandgap crystals). In a novel approach to ``thresholdless" lasers, we have developed a new growth technique for self-assembled deep-centers in the technologically important semiconductor gallium-arsenide. We recently demonstrated the first gallium-arsenide deep-center laser. These lasers, which intentionally utilize gallium-arsenide deep-center transitions, exhibited a threshold current density of less than 2A/cm2 with electrical injection in continuous-wave mode at room temperature at the important 1.54um fiber-optic wavelength. Moreover, in contrast to conventional semiconductor devices, whose operating wavelengths are fixed by the bandgap energy, the room-temperature stimulated-emission from gallium-arsenide deep-centers can be tuned very widely from the bandgap (about 900nm) to half-the-bandgap (1600nm). We demonstrated laser action at many wavelengths between 1.2um and 1.6um, which includes fiber-optic wavelengths. We explain the physics of gallium-arsenide deep-center lasers. Biography: At Yale University, Dr. Janet Pan has been a winner of the NSF Career, ONR Young Investigator, and Sheffield Teaching Awards. Dr. Pan has been an Invited Speaker at the March Meeting of the APS, the International Conference on the Physics of Semiconductors, and Photonics West. Dr.Pan received all her degrees from the Massachusetts Institute of Technology. While at MIT, she won the Hertz, NSF, and Rockwell International Graduate Student Fellowships. She was also a winner of the Associate of MIT Alumnae Highest Academic Achievement Award for best female undergraduate student.
Janet Pan , Associate Professor and Research Scientist, Yale University.
Bldg.217, Rm.H107. (NIST Contact: Kartik Srinivasan, 301-975-5938, kartik.srinivasan@nist.gov)

11/5/09 9:00 AM - OFFICE OF SECURITY: Counterintelligence; Indicators of Espionage 2009-2010
November 5, 2009, 9:00 a.m. - 10:00 a.m. Advanced registration requested OSY@NIST.GOV. Walk-ins welcome.
Michael Chandler , Office of the Chief Facilities Management.
Administration Building, Green Auditorium. (NIST Contact: Michael Chandler, 301-975-3305, michael.chandler@nist.gov)

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MEETINGS ELSEWHERE


10/5 -- MONDAY

No Scheduled Events

10/6 -- TUESDAY

No Scheduled Events

10/7 -- WEDNESDAY

No Scheduled Events

10/8 -- THURSDAY

No Scheduled Events

10/9 -- FRIDAY

No Scheduled Events

ADVANCE NOTICE

10/13/09 9:00 AM - END-TO-END VOTING SYSTEMS WORKSHOP
The goal of this workshop is to understand the security and usability properties of end-to-end voting systems, one type of next-generation system of interest. This type of system enables voter-verification of election outcome. Several proposed systems have been prototyped; some have been tested in binding elections.
Ron Rivest , MIT. Josh Benaloh , Microsoft.
Bldg, Rm..
George Washington University, Third Floor Amphitheatre (Marvin Center), Washington DC 20052. (NIST Contact: Sara Caswell, 301-975-4634, sara@nist.gov) http://www.csrc.nist.gov/groups/ST/e2evoting/index.html

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TALKS BY NIST PERSONNEL

KUSHMERICK, J. : PROBING CHARGE TRANSPORT IN MOLECULAR SYSTEMS.
Sandia National Laboratory, Albuquerque, NM, 10/6.

SHIRLEY, E. : DEEP AND PENETRATING INSIGHT INTO SOLIDS THROUGH TWO TOOL: X-RAY $ ELETRONICS STRUCTURE THEORY.
11th International Conference on Electronic Spectroscopy and Structure, New Public Hall, Nara National Park, Nara Japan, 10/6.

CLARK, C. : RELATIVITY AT A BILLIONTH OF THE SPEED OF LIGHT.
Joint Atomic Physics Colloquium, Harvard University, Cambridge, MA, 10/7.

BAILEY, M. : COVALENTLY CROSSLINKED FLUORINATED NANOPARTICLES AS A NOVEL 19F-MRI CONTRAST AGENT.
Biomedical Engineering Society, Pittsburgh, PA, 10/7.

BURNS, T. : MODELING OF RAPID SHEAR IN HIGH-SPEED MACHINING.
2009 SIAM Conference on Mathematics for Industry, San Francisco, CA, 10/9.

GILSINN, D. : VOLUME ESTIMATION OF MOLDED ARTIFACTS BY B-SPLINES.
SIAM Conference on Mathematics for Industry, San Francisco, CA, 10/10.

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ANNOUNCEMENTS

THINK SAFETY! THINK STANDARDS!
Safety standards are now available on the NIST Intranet. Standards are an important part of the safety literature and are vital elements in framing and defining safety policies and procedures. Consult this page for a variety of core safety standards relevant to NIST's operations and interests. NIST's NCSCI (National Center for Standards and Certification Information, TS, Standards Services Division) can send you any other safety standards you need and guide you to other relevant standards. Call NCSCI on ext. 4040 or email ncsci@nist.gov with your safety standards needs.
NIST Contact: Anne Meininger, 301-975-2921, anne.meininger@nist.gov

VISITOR REGISTRATION FOR NIST EVENTS
Because of heightened security at the NIST Gaithersburg site, members of the public who wish to attend meetings, seminars, lectures, etc. must first register in advance. For more information please call or e-mail the "NIST Contact" for the particular event you would like to attend.
NIST Contact: . ., ., .

DIVERSITY DAY 4: GENERATIONAL DIVERSITY
Diversity Day 4: Generational Diversity with Robert Wendover Tuesday, November 10, 2009 This event will feature a keynote seminar and staff panel discussion in the morning. Smaller seminars for senior and line management will continue in the afternoon. The schedule is as follows: 9-10 a.m. ET: Generational Diversity Panel Discussion 10:30-11:45 a.m. Red Auditorium Keynote: Managing Age Diversity in Today's Workplace How does a "fifty-something" lead a "twenty-something?" How does a "twenty-something" lead a "fifty-something?" To thrive in this new world, you must understand the values and attitudes of both new and experienced workers. This talk helps you take a realistic, yet amusing look at how the generations relate. 12:30 p.m. Senior Leaders Lunch Session: Succession Planning and the New Generations As Baby Boomers edge closer to retirement, they are being replaced by a cohort of people having a radically different take on leadership. Younger generations will challenge the traditional ways that organizations promote and develop leaders. This a unique program focused on how your enterprise can ensure tomorrow's success by integrating the aspirations of young workers with the wisdom of veteran managers. 2 p.m. – 3:30 p.m. Division Chiefs and Group Leaders Green Auditorium Been There, Done That! Best Practices in Managing Age Diversity Age differences in today's workplace have become a major challenge for supervisors young and old. Veteran managers think young people lack initiative and common sense. Young workers think older employees are stuck in their ways. Young people depend upon technology. Older workers depend upon their experience. This will help you connect with the needs and desires of the diverse generations in your workplace and learn how managers in your industry and others are not just surviving, but thriving with the young talent entering the workforce.
NIST Contact: Jeremy Lawson, 301-975-5481, jeremy.lawson@nist.gov

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NIST WEB SITE ANNOUNCEMENTS

No Web Site announcements this week.

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For more information, contact Ms. Sharon Hallman, Editor, Stop 2500, National Institute of Standards and Technology, Gaithersburg MD 20899-2500; Telephone: 301-975-TCAL (3570); Fax: 301-926-4431; or Email: tcal@nist.gov.

All lectures and meetings are open unless otherwise stated.

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