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September 21 to September 25, 2009

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AT A GLANCE - MEETINGS AT NIST

MONDAY - 9/21
8:00 AM - Performance Metrics for Intelligent Systems
10:30 AM - Electrochemical Studies on Pt-modified Metal (M) Bimetallic Electrocatalysts
11:00 AM - Rigorous Comparison of X-ray Diffraction Thickness Measurement Techniques using Silicon-On-Insulator Thin Films
TUESDAY - 9/22
10:30 AM - Sub-wavelength Addressing for Neutral Atom Qubits and New Multi-Photon Laser Cooling and Trapping Techniques
10:30 AM - Engineered Nanostructures of Antigen Provide Alternative and Superior Means for Investigating and Activating Mast Cells
11:00 AM - Copper Electroplating in High Aspect Ratio Through-Silicon Vias for 3D-Integration
WEDNESDAY - 9/23
10:30 AM - The Dark Side of Carbon Nanotubes
THURSDAY - 9/24
10:30 AM - Late-State Ripening Dynamics of a Polymer/Clay Nanocomposite
FRIDAY - 9/25
10:30 AM - From Nature and Back Again - Giving New Life to Materials for Energy, Electronics, Medicine and the Environment

MEETINGS AT NIST

9/21 -- MONDAY

8:00 AM - ,DARPA, ACM, IEEE, NSF SEMINAR: Performance Metrics for Intelligent Systems
The Performance Metrics for Intelligent Systems workshop is the only one of its kind dedicated to defining measures and methodologies of evaluating performance of intelligent systems. Started in 2000, the PerMIS series focuses on applications of performance measures to practical problems in commercial, industrial, homeland security, and military applications. It has proved to be an excellent forum for discussions and partnerships, dissemination of ideas, and future collaborations between researchers, graduate students, and practitioners from industry, academia, and government agencies.
Tom Mitchell , Carnegie Mellon University. Benjamin Kuipers , University of Michigan. Paul Cohen, University of Arizona; David Bruemmer, 5D Robotics (formerly with Idaho National Laboratory); Lora Weiss, Georgia Institute of Technology; Raffaello D'Andrea, ETH
Administration Bldg, Green Aud & Lecture Rooms. (NIST Contact: Elena Messina, 301-975-3510, elena.messina@nist.gov) http://www.isd.mel.nist.gov/PerMIS_2009/


10:30 AM - CNST ENERGY RESEARCH GROUP SEMINAR: Electrochemical Studies on Pt-modified Metal (M) Bimetallic Electrocatalysts
Electrocatalytic activities of Pt-modified M (M = Ru, Au) bimetallic catalysts were prepared in terms of a surface modification strategy were investigated towards methanol (MeOH) electro-oxidation, carbon monoxide (CO) oxidation and oxygen reduction reaction (ORR). By experimentally controlling the Pt coverage on the metal substrates via a spontaneous deposition method, the resulting Pt-modified Ru or Au substrates indicated Pt coverage-dependent electrochemistry. Most importantly, it was observed that the inactivity of Pt towards MeOH oxidation with very low coverage and, the emerging and increasing activity with increasing coverage coincided with the phenomena predicted by the ensemble effect, a hypothesis that has not yet supported directly by experimental evidence. Later a one-pot wet chemistry method was developed to prepare Pt-decorated Ru nanoparticles with a submonolayer of Pt. The electrochemical characterization of the whole series of samples provided experimental evidence that strongly supported a bifunctional mechanism, rather than an electronic effect as the dominant factor contributing to the enhanced CO tolerance. Finally, using a core(Au)/shell(Pt) model, a detailed investigation of electrocatalytic properties of Au@Pt nanoparticles was performed as a function of the Pt shell packing density and Au core size. It was observed that the electrochemical behavior of Pt quite much deviated from its bulk counterpart especially at low coverage. The data obtained so far indicated that the future of PtAu as an anode electrocatalyst for MOR is questionable.
Bingchen Du , Postdoctoral Fellow, Georgetown University.
Bldg. 217, Rm. H107. (NIST Contact: Alec Talin, 301-975-4724, albert.talin@nist.gov)


11:00 AM - CERAMICS DIVISION SEMINAR: Rigorous Comparison of X-ray Diffraction Thickness Measurement Techniques using Silicon-On-Insulator Thin Films
In this study we present thickness data from semiconductor grade silicon-on-insulator (SOI) thin film samples determined from high-resolution x-ray diffraction (HRXRD) data using the Scherrer equation, rocking-curve modeling, thickness fringe analysis, Fourier analysis, and the Warren-Averbach method, as well as with cross-sectional transmission electron microscopy (TEM) and x-ray reflectivity measurements. Our results show that the absolute accuracy of thin film thickness values obtained from HRXRD data is approximately 1 nm for all techniques if all sources of broadening are correctly identified, while their precision is two orders of magnitude smaller. Our results indicate that: (1) the use of multiple techniques is required to determine the various contributions to peak broadening; (2) SIO thin films may be suitable standards in x-ray reflectivity and broadening analysis.
I Noyan , Professor, Dept. of Applied Phys. and Math., Columbia University, New York, NY. Andrew Ying , Dept. of Applied Phys. and Math., Columbia University, New York, NY. Conal E. Murray, IBM T.J. Watson Research Center, Yorktown Heights, NY
223 Bldg, Rm. B307. (NIST Contact: Jim Cline, 301-975-5793, james.cline@nist.gov)



9/22 -- TUESDAY

10:30 AM - ATOMIC PHYSICS DIVISION SEMINAR: Sub-wavelength Addressing for Neutral Atom Qubits and New Multi-Photon Laser Cooling and Trapping Techniques
I will discuss two different, recent experiments in our lab. In the first, we demonstrate a technique to provide field-sensitive addressing and control of field-insensitive neutral-atom qubits. The approach, using "optical magnetic resonance imaging" techniques, normally requires field sensitive transitions which are not conducive to quantum computing. By using two pairs of clock transitions in a single atom, and using the field sensitive transitions between the pairs, we are able to simultaneously address the atoms with field gradients while preserving the field sensitivity of neighboring qubits. In the second experiment, we have developed new techniques for laser cooling and trapping atoms that rely on transitions between electronically excited states. Such "multi-photon" laser cooling may have applications in background-free detection of trapped atoms, and in assisting laser-cooling and trapping of certain atomic species (like hydrogen) that require cooling lasers at inconvenient wavelengths.
James (Trey) Porto , Physicist, Atomic Physics Division, NIST.
221 Bldg, Rm. B145. (NIST Contact: Gail Newrock, 301-975-3200, gail.newrock@nist.gov)


10:30 AM - CNST ELECTRON PHYSICS GROUP SEMINAR: Engineered Nanostructures of Antigen Provide Alternative and Superior Means for Investigating and Activating Mast Cells
The high-resolution imaging and nanofabrication capabilities of AFM were exploited to unravel the signaling processes involved in the activation of mast cells, a key cell type of the immune system. AFM imaging in buffer revealed rich membrane structures associated with the activation of mast cells with remarkable details. These high-resolution surface characteristics were further correlated with cytoskeletal arrangement and intracellular organelles using a combined atomic force and laser scanning confocal microscope, which enabled the disclosure of detailed degranulation mechanisms for mast cells. Ligand nanostructures that mimic multivalent antigens in vivo were fabricated on surfaces using AFM-based nanografting, and served as cell-stimulating platforms. Upon changing geometrical parameters these engineered nanostructures exhibited regulatory effects on both cell adhesion and activation. These investigations demonstrate the revealing and regulatory power of AFM on the hypersensitive reactions of mast cells, and pave the way for the development of new therapies for treating allergic diseases.
Zhao Deng , Graduate Student.
Bldg. 217, Rm. H107. (NIST Contact: Rachel Cannara, 301-975-4258, rachel.cannara@nist.gov)


11:00 AM - METALLURGY DIVISION SEMINAR: Copper Electroplating in High Aspect Ratio Through-Silicon Vias for 3D-Integration
Dean Malta , RTI International. Christopher Gregory Dorota Temple.
Materials Bldg, Rm. B351. (NIST Contact: Daniel Josell, 301-975-5788, daniel.josell@nist.gov)



9/23 -- WEDNESDAY

10:30 AM - POLYMERS DIVISION SEMINAR: The Dark Side of Carbon Nanotubes
Since their discovery in the early nineties, carbon nanotubes have received a great deal of publicity; from the popular press to the most obscure scientific journals. Meanwhile, many people in the scientific community view the promise of carbon nanotube technology with skepticism. I will address the fact that carbon nanotubes are literally dark, forming the basis of one of their real and immediate applications. That is, carbon nanotube coatings may be employed as black absorbers having high thermal diffusivity. The interaction of light and carbon nanotubes will be discussed along with more specific questions about dielectric function, laser-induced damage, plasmons and photoconductivity of carbon nanotube-based coatings.
John Lehman , EEEL, NIST-Boulder.
224 Bldg, Rm. A312. (NIST Contact: Joe Kline, 301-975-4356, joe.kline@nist.gov)



9/24 -- THURSDAY

10:30 AM - POLYMERS DIVISION SEMINAR: Late-State Ripening Dynamics of a Polymer/Clay Nanocomposite
While physical gels are used extensively,still little is known about the development of their structure. It is quite typical for a physical gel that its structure passes through an early gel point and then continues to ripen in a sequence of non-equilibrium states until it reaches a stable structural state. This stable endstate might or might not be the equilibrium state. A remarkably simple relaxation pattern was found when investigating such structural ripening for the physical gelation of a nanocomposite. The model system consists of two components, an organo-clay and an end-functionalized polymer. After freshly mixing a measured amount of the clay into the polymer, the polymer slowly intercalates into the clay galleries and eventually exfoliates the clay. The exfoliation is purposely allowed to occur without applying flow. The nanocomposite quickly passes through the gel point and, with increasing ripening time, tr , its characteristic modulus Gc(tr) and relaxation time ?c(tr), respectively, grow and decay by orders of magnitude. Surprisingly, their product, Gc(tr)?c(tr), is found to remain constant during the two vastly different structuring processes of intercalation and exfoliation. Xiaoliang Wang, Pingchuan Sun, Gi Xue Dpt. Polymer Science and Engineering, Nanjing University, Nanjing 210093, China; ‡ College of Chemistry, Nankai University, Tianjin, 300071, China
H. Henning Winter , National Science Fundation, Program Director Fluid Dynamics Program, Arlington, VA, hwinter@nsf.gov.
224 Bldg, Rm. A312. (NIST Contact: Kalman Migler, 301-975-4876, kalman.migler@nist.gov)



9/25 -- FRIDAY

10:30 AM - NIST COLLOQUIUM SERIES: From Nature and Back Again - Giving New Life to Materials for Energy, Electronics, Medicine and the Environment
This talk will describe conditions under which organisms first evolved to generate materials and then discuss how one might move beyond naturally evolved materials to genetically imprint advanced technologies. Organisms have been making exquisite materials for over 500 million years, but the types of materials that organisms have evolved to work with are limited. However, there are many properties of living systems that could be harnessed to make advanced technologies that are smarter, more adaptable, and more compatible with the environment. One approach is to evolve organisms to work with a more diverse set of building blocks and design them to address electronic, military, medicine, and energy applications. Examples include a virus-enabled lithium ion rechargeable battery and materials for solar and display technologies.
Angela Belcher , Departments of Materials Science and Engineering and Biological Engineering, MIT.
Administration Building, Green Auditorium. (NIST Contact: Kum Ham, 301-975-4203, kham@nist.gov)
Special Assistance Available



ADVANCE NOTICE

10/2/09 1:30 PM - CNST ELECTRON PHYSICS GROUP SEMINAR: SPIN TRANSFER TORQUE INDUCED LOW TEMPERATURE MAGNETIZATION DYNAMICS: A CASE STUDY
Unambiguous evidence for the switching of sub-micron size spin-valves elements under the action of spin transfer torques was gained in year 2000 [1], i.e. some three years after the publication of John Slonczewski 's seminal patent [2]. Another key theoretical prediction is the existence of stable precession states under suitable field and dc current conditions [2]. Sustained precession gives rise to an rf GMR signal in the few GHz range, the frequency of which may be tuned by the amplitude of the dc current. A few GHz agility has been demonstrated in nano-contact devices [3] or GMR-type nanopillars [4,5] . Although the very existence of precessional states is understood in broad terms, fine features of the dispersion relations clearly call for an analysis beyond the single spin approximation. In spite, however, of the highly predictive power of micromagnetics, a fine comparison between theory and the most appealing experimental results has remained elusive. Rather than attempting to correlate experimental data with simulations based on assumed sample properties, it may well seem more appropriate to imagine which sample properties may lead to a given experimental response. It turns out that even a rather poor answer truly proves challenging. [1] F. J. Albert et al., Appl. Phys. Lett. 77 (2000) 3809 [2] J. C. Slonczewski, US Patent 5 695 864 (1997) [3] W.H. Rippard et al., Phys. Rev. Lett. 92 (2004) 027201 [4] I. N. Krivorotov et al., SCIENCE 307 (2005) 228 [5] I.N. Krivorotov et al., Phys. Rev. B76 (2007) 024418
Jacques Miltat , CNST Visiting Fellow/ Laboratoire de Physique des Solides, France.
Bldg. 217, Rm. H107. (NIST Contact: Mark Stiles, 301-975-3745, mark.stiles@nist.gov)


10/9/09 10:30 AM - NIST PORTRAIT CEREMONY: NIST Portrait Ceremony October 9, 2009
NIST staff and alumni are invited to the ceremony adding nine portraits to the NIST Gallery of Distinguished Scientists, Engineers and Administrators in the Red Auditorium on Friday, October 9, 2009, at 10:30 a.m. The honorees are James Albus, MEL; Richard Durst, CSTL; Keith Eberhardt, ITL; Richard Fields, MSEL; J. William Gadzuk, PL; Frances Loomis Lloyd, EEEL; H. Steffen Peiser, OD; Tawfik Raby, NCNN; and John Stephenson, PL. The ceremony is an opportunity for all of NIST to observe and celebrate the accomplishments that have been achieved in outstanding NIST careers. It is a particularly good opportunity for younger staff to gain perspective on the variety, magnitude and influence of their career opportunities at NIST. Their families, friends and colleagues are invited to join the honorees in a breakfast reception in the Former Senior Lunch Club at 9:30 a.m. on October 9.
. . , ..
Administration Building, Red Auditorium. (NIST Contact: Hans Oser, 301-975-2486, hans.oser@nist.gov)


10/23/09 10:30 AM - ATOMIC PHYSICS DIVISION SEMINAR: Material and Electrical Characterization for Qubit Devices
Silicon Quantum Dot fabrication for Qubits requires a minimum of defects to produce clean quantum dots and barriers. Identifying sources of defects in the process flow is critical for this goal. We can both i) characterize oxide quality with C-V and mobility measurements to improve fabrication processes, and ii) provide quantitative estimates of the defects, which provides guidance to design and modeling efforts. In this presentation, we report on the impact of several critical process steps, including poly-Si etch, top gate metallization, atomic layer deposition of dielectrics, and various anneals.
Greg Ten Eyck , Sandia National Labs.
Physics Building, Room B145. (NIST Contact: Neil Zimmerman, 301-975-5887, neil.zimmerman@nist.gov)



MEETINGS ELSEWHERE



9/21 -- MONDAY

No Scheduled Events

9/22 -- TUESDAY

No Scheduled Events

9/23 -- WEDNESDAY

No Scheduled Events

9/24 -- THURSDAY

No Scheduled Events

9/25 -- FRIDAY

No Scheduled Events

ADVANCE NOTICE

10/13/09 9:00 AM - END-TO-END VOTING SYSTEMS WORKSHOP
The goal of this workshop is to understand the security and usability properties of end-to-end voting systems, one type of next-generation system of interest. This type of system enables voter-verification of election outcome. Several proposed systems have been prototyped; some have been tested in binding elections.
Ron Rivest , MIT. Josh Benaloh , Microsoft.
Bldg, Rm..
George Washington University, Third Floor Amphitheatre (Marvin Center), Washington DC 20052. (NIST Contact: Sara Caswell, 301-975-4634, sara@nist.gov) http://www.csrc.nist.gov/groups/ST/e2evoting/index.html




TALKS BY NIST PERSONNEL


CLARK, C. : TOOLKITS FOR QUANTUM GAUGE POTENTIALS.
Workshop on Quantum Gauge Potentials and Ultracold Atoms, San Benet, Spain, 9/4.

CLARK, C. : NEXT-GENERATION ATOMTRONICS.
Annual Meeting of the Engineering, Manipulation and Characterization of Quantum States of Matter and Light (EMALI), Pisa, Italy, 9/14.

HUDSON, L. : METROLOGY FOR EXTREME X-RAY LIGHT SOURCES.
11th International Symposium on Radiation and Physics, Melbourne, Australia, 9/21.

WU, W. : APPLICATION OF SAXS FOR NANOSTRUCTURE CHARACTERIZATION.
Technische Universitat Berlin, Berlin, Germany, 9/21.



ANNOUNCEMENTS


RESEARCH INVOLVING HUMAN SUBJECTS
Individuals at NIST who wish to conduct, or wish to sponsor, any research involving human subjects, including human cells or tissue, are required by Federal regulations to obtain approval before embarking on the research. This includes: (1) Research conducted here at NIST by NIST employees or guest workers; (2) Collaborative research with others outside of NIST, including CRADAs and other agreements; and/or (3) Research funded by NIST through grants, contracts, or cooperative agreements. The current procedures for approving projects involving human subjects can be found in the NIST Administrative Manual Subchapter 14.01, Protection of Human Subjects (http://www-i.nist.gov/admin/mo/adman/1401.htm). These procedures ensure that the proposed research is in compliance with the applicable DOC Regulations, 15 C.F.R. Part 27 (http://www.access.gpo.gov/nara/cfr/waisidx_99/15cfr27_99.html). NIST's Institutional Review Board (IRB) reviews and approves those research proposals involving human subjects that require IRB review for research to be conducted by NIST employees, with or without the participation of others. The NIST IRB is described in Administrative Manual Subchapter 3.01, Appendix A (http://www-i.nist.gov/admin/mo/adman/301irb.htm). These regulations are broader than many people realize, and involve more than, for example, just invasive medical procedures. They can also cover volunteers participating in questionnaires and surveys and people testing computer software. All research involving human subjects being conducted at an institution outside of NIST that has not been determined to be exempt from the Federal policy by the appropriate NIST OU Director must be approved by a cognizant IRB that is currently registered with the Office for Human Research Protections (OHRP), DHHS. In addition, the institution conducting the research involving human subjects must have a current Federalwide Assurance (FWA) on file with OHRP. The outside IRB's approval will be subject to review and approval by NIST. The NIST IRB Chair reviews the documentation provided by the outside researchers and the outside IRB and recommends approval or disapproval to the NIST Deputy Director, with the concurrence of the Chief Counsel for NIST. Research being conducted at NIST by NIST employees that has not been determined to be exempt by the appropriate NIST OU Director must be reviewed by the NIST IRB. The use of human subjects in the project may not begin until the Chief Counsel for NIST has concurred with the IRB's recommendation to approve the project and the Deputy Director of NIST has approved it. Signatures required before the proposal is sent to the NIST IRB include that of the Group Leader and Division Chief (who approve the scientific merit of the research), and the Laboratory Director (who determines whether it is exempt or requests IRB review). An OU Director's exemption determination must receive concurrence from the Chief Counsel for NIST and then be forwarded to the NIST IRB Chair, Dr. Richard R. Cavanagh, for noting and filing. For more information, contact the NIST IRB Secretary, Janet Brumby, (301) 975-3189 or email: brumby@nist.gov or visit our website at: http://www-i.nist.gov/director/IRB/ (For best viewing of all pages associated with this website, your monitor should have a display setting of 800 by 600 and in Microsoft Internet Explorer). All correspondence should be mailed to Mail Stop 1710.
NIST Contact: Janet Brumby, 301-975-3189, janet.brumby@nist.gov


THINK SAFETY! THINK STANDARDS!
Safety standards are now available on the NIST Intranet. Standards are an important part of the safety literature and are vital elements in framing and defining safety policies and procedures. Consult this page for a variety of core safety standards relevant to NIST's operations and interests. NIST's NCSCI (National Center for Standards and Certification Information, TS, Standards Services Division) can send you any other safety standards you need and guide you to other relevant standards. Call NCSCI on ext. 4040 or email ncsci@nist.gov with your safety standards needs.
NIST Contact: Anne Meininger, 301-975-2921, anne.meininger@nist.gov


VISITOR REGISTRATION FOR NIST EVENTS
Because of heightened security at the NIST Gaithersburg site, members of the public who wish to attend meetings, seminars, lectures, etc. must first register in advance. For more information please call or e-mail the "NIST Contact" for the particular event you would like to attend.
NIST Contact: . ., ., .




NIST WEB SITE ANNOUNCEMENTS


No Web Site announcements this week.

For more information, contact Ms. Sharon Hallman, Editor, Stop 2500, National Institute of Standards and Technology, Gaithersburg MD 20899-2500; Telephone: 301-975-TCAL (3570); Fax: 301-926-4431; or Email: tcal@nist.gov.

All lectures and meetings are open unless otherwise stated.

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