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August 4 to August 8, 2008

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AT A GLANCE - MEETINGS AT NIST

MONDAY - 8/4
10:30 AM - The Preparation of Synthetic Macromolecular Carriers for Biomedical Applications
10:30 AM - Computer Image Analysis in the Study of Art
10:45 AM - Low symmetry short-range ordered nanoprecipitates directly observed by neutron diffuse scattering in highly magnetostrictive Galfenol Fe1-xGax alloys
TUESDAY - 8/5
9:00 AM - SURF 2008 Colloquium
WEDNESDAY - 8/6
10:45 AM - Dynamics of Water in Various States and Surroundings
1:30 PM - Modulating the Seebeck coefficient in organic thin-film and single-crystal transistors
THURSDAY - 8/7
No Scheduled Events
FRIDAY - 8/8
10:30 AM - Functional Nanoparticle Assemblies Based on Layer-by-Layer Assembly and Microfluidics
11:00 AM - Minimizing Magnetic Errors in Measurements of Small Forces and Torques

MEETINGS AT NIST

8/4 -- MONDAY

10:30 AM - POLYMERS DIVISION SEMINAR: The Preparation of Synthetic Macromolecular Carriers for Biomedical Applications
Host-guest chemistry has been recently explored for the encapsulation of small molecules for applications as diverse as catalysis and drug delivery. However, the small cavity sizes make typically hosts (such as crown ethers, cyclodextrins, cyclophanes, calixarenes, etc.) inefficient for loading small molecules, and ineffective for encapsulating larger molecules, such as peptides or proteins. To meet the demand for larger carriers, polymers have been selected as components and assembled into higher order architectures using highly efficient "click" chemistry. Polymeric components that have been optimized for this approach include linear polymers prepared by living radical polymerization techniques, aliphatic polyester dendrons prepared in a divergent fashion, and cyclic polymers prepared by a Huisgen "click-cyclization" approach.
Scott Grayson , Professor, Department of Chemistry, Tulane University, New Orleans, LA.
Polymer Building, Rm. A312. (NIST Contact: David Germack, 301-975-4441, david.germack@nist.gov)


10:30 AM - ITL SEMINAR SERIES: Computer Image Analysis in the Study of Art
Abstract: In the past few years, a handful of scholars worldwide trained in computer vision, pattern recognition, image processing and art history have applied the techniques of computer vision to problems in the history of art. These new computer methods, guided by art historical knowledge, are shedding new light on art works, artistic praxis, and more. Again and again, we see that for some problems these computer methods are more sensitive, more perceptive, than even a trained artist or art historian. For instance, visual psychologists have shown that most of us ¬trained art scholars and artists included ¬are not particularly good at judging perspective or the location of illumination in a photograph, and, by extension, in a painting. But these new computer methods can be extremely good at just such tasks. Likewise, computer image processing methods can detect the subtlest variations in brush strokes, variations that elude most trained eyes. Moreover, some highly sophisticated methods, such as fractal analysis of Jackson Pollock's drip paintings, introduce new visual measures not even considered by the art community. As such, these computer methods, guided by questions in art history, will likely prove to be a valuable tool to the conservators, curators and art historians who learn how they work as well as their strengths and limitations. Bio: Dr. David G. Stork (http://rii.ricoh.com/~stork/) is Chief Scientist at Ricoh Innovations and Consulting Professor of Statistics and Visiting Lecturer in Computer Science at Stanford University, where he has held appointments, taught, and sat on dissertation committees frequently over the last 19 years in the departments of Computer Science, Electrical Engineering, Statistics, Psychology and Art and Art History. He is a Fellow of the International Association for Pattern Recognition and has published six books, including Seeing the Light: Optics in nature, photography, color, vision and holography (Wiley), the leading textbook on optics in the arts, Computer image analysis in the study of art (SPIE), the first volume in this discipline, Pattern Classification (2nd ed.), the world's all-time best-selling textbook in the field, translated into three languages and used in courses in over 250 universites worldwide, and HAL's Legacy: 2001's computer as dream and reality (MIT), the source of his PBS television documentary 2001: HAL's Legacy. A graduate in physics of the Massachusetts Institute of Technology and the University of Maryland at College Park, he also studied art history at Wellesley College and was Artist-in-Residence through the New York State Council of the Arts.
Dr. David Stork , Chief Scientist, Ricoh Innovations.
AML/Bldg 215, Rm. C103. (NIST Contact: Larry Reeker, 301-975-5147, larry.reeker@nist.gov)


10:45 AM - NIST CENTER FOR NEUTRON RESEARCH SEMINAR: Low symmetry short-range ordered nanoprecipitates directly observed by neutron diffuse scattering in highly magnetostrictive Galfenol Fe1-xGax alloys
Giant magnetostriction in galfenol Fe-xat.%Ga alloys about 15x27, coupled with robust mechanical properties, make them attractive for potential applications as magneto-acoustic sensors, actuators and transducers. The addition of Ga into the body-centered cubic (bcc) ?-Fe (or A2) phase results in a large increase in the magnetostriction 3?100/2=400ppm at room temperature with low saturation magnetic fields, whereas the saturation magnetostriction in pure Fe is only about 33ppm. A local short-range ordered DO3 (i.e. bcc Fe3Ga) nanoprecipitates, which were decomposed out of the A2 matrix in the two-phase region of DO3+A2, has been suggested to be responsible for this large increase in magnetostriction. Our neutron diffuse scattering measurements have shown that the crystal structure of DO3 nanoprecipitates is in fact strongly distorted from cubic symmetry. This is evidenced by the asymmetric radial lineshape of the diffuse scattering intensity observed near the (100), which is very broad and incommensurate with respect to the A2 lattice. Analysis of the diffuse intensity profile revealed a peak-splitting consistent with tetragonal or lower symmetry with a large lattice ratio of c/a ? 1.2. Investigations as a function of Ga content also have shown that the diffuse scattering intensity is strongest near Fe-19at%Ga, where the maximum magnetostriction was observed. These results confirm that the enhanced magnetostriction in Fe-xat.%Ga alloys is directly related to the structural heterogeneity of the low symmetric DO3 nanoprecipitates.
Hu (Tiger) Cao , Department of Materials Science and Engineering, Virginia Tech.
Building 235, Room E100. (NIST Contact: Jeff Lynn, 301-975-6246, jeffrey.lynn@nist.gov)



8/5 -- TUESDAY

9:00 AM - SURF 2008 COLLOQUIUM: SURF 2008 Colloquium
Come enjoy the SURF students talks....130 students participated in this year's 2008 Summer Undergraduate Research Fellowship (SURF) program here in Gaithersburg. The SURF program is co-sponsored by the NIST and the National Science Foundation and it gave the undergraduate students a chance to see and experience the excitement that comes with a technical research career by working side-by-side with one of our own NIST scientists or engineers during their summer break. This summer's students come from 64 different schools (two-year colleges to major research universities) and represent states and territories across the United States from California to Puerto Rico. The summer's program culminates in a three-day colloquium (August 5-7, 2008) where the students present 15-20 minute talks on their summer research. The talks are a great way to see the breath of research that is happening across the Gaithersburg campus. The colloquium is set up similar to many professional conferences - starting with a plenary session on the morning of Tuesday, August 5, 2008 (9:00 a.m. - 1:30 p.m.) in Green auditorium. The colloquium continues that afternoon (2:30 p.m. - 4:00 p.m.) with parallel session in Administration Building, Lecture Rooms A, B, & C. Additional parallel session will be held Wednesday (August 6) & Thursday (August 7) morning (9:00 a.m. - 12:00 p.m.) and afternoons (1:30 p.m. ­ 3:00 p.m.) in Lecture Rooms A, B, C, & D. The talks are open to all interested parties. For more information, please visit the detailed schedule on www.surf.nist.gov/surf2.htm.
. . , ..
Administration Bldg, Green Auditorium. (NIST Contact: Lisa Fronczek, 301-975-6633, lfronczek@nist.gov)



8/6 -- WEDNESDAY

10:45 AM - NIST CENTER FOR NEUTRON RESEARCH SEMINAR: Dynamics of Water in Various States and Surroundings
Water is a very important substance in life science, earth and space science, and of course in basic condensed matter science. Neutron scattering is a powerful probe for water molecules owing to large scattering cross section of hydrogen atoms and strong scattering contrast between H and D atoms. In this seminar, following a brief introduction of the speaker's facility (ISSP and JRR-3), He will talk about some of his recent neutron scattering works on water in supercooled and glassy states, and also in various surroundings such as in gels, around proteins, and in various nano-porous materials. They have found some characteristic low-energy excitations due to disordered and distorted local structure, and slowing-down and acceleration of diffusive motions due to excess formation or breakdown of hydrogen-bonds.
Osamu Yamamuro , ISSP, University of Tokyo, Tokyo, Japan. ,.
235 Bldg, Rm. E100. (NIST Contact: Madhu Tyagi, 301-975-2046, mtyagi@nist.gov)


1:30 PM - SEMICONDUCTOR ELECTRONICS DIVISION SEMINAR: Modulating the Seebeck coefficient in organic thin-film and single-crystal transistors
Modulating the Seebeck coefficient in organic thin-film and single-crystal transistors The Seebeck coefficient S is a basic transport property of solids and is given by the entropy transported by thermally excited charge carriers. In the simplest case, S involves only electronic contributions and is determined by the band structure and scattering events. I will present our study where we have measured the temperature and carrier concentration dependence of the Seebeck coefficient of two prototypical organic semiconductors using field-effect transistor (FET) structures. Using a FET structure enables the variation of the Fermi-level position in the active semiconductor region while measuring S, and importantly, to distinguish the electronic from the non-electronic contribution to entropy transport. The subtleties of this novel measurement technique will be discussed in detail. Our study highlights the similarity of transport mechanisms in organic and inorganic semiconductors and helps to understand the nature and dynamics of charge and energy transport in organic semiconductors. Charge and entropy transport in these devices is best described by band-like transport of quasiparticles that are subjected to scattering, with exponentially distributed in-gap trap states, and without further contribution of S.
Kurt Pernstich , ETH Zurich Solid State Physics Dept., Switzerland.
225 Bldg, Rm. A362. (NIST Contact: David Gundlach, 301-975-2048, david.gundlach@nist.gov)



8/7 -- THURSDAY

No Scheduled Events

8/8 -- FRIDAY

10:30 AM - POLYMERS DIVISION SEMINAR: Functional Nanoparticle Assemblies Based on Layer-by-Layer Assembly and Microfluidics
Recent advances in materials chemistry have enabled the synthesis of nanoparticles with useful optical, catalytic, and magnetic properties. Assembly of these nanoparticles into functional structures, with precise control over their properties, would lead to great advances. However, it still remains a great challenge to achieve this goal through simple means. This presentation will discuss two methods – layer-by-layer (LbL) assembly and microfluidics – that have been utilized for the fabrication of functional thin films and microcapsules. In the first part of the talk, I will describe our work on the layer-by-layer assembly of all-nanoparticle thin films that exhibit antireflection, antifogging (superhydrophilicity), and self-cleaning properties. In addition, the importance of assembly condition for all-nanoparticle thin films based on electrostatic interactions will be discussed. In the second part of the talk, our recent efforts to generate semi-permeable microcapsules known as colloidosomes will be described. Monodisperse water-in-oil-in-water (W/O/W) double emulsions with a core-shell geometry are generated using glass capillary microfluidic devices. These double emulsions, in turn, are utilized as templates for fabrication of sophisticated new structures including colloidosomes.
Daeyeon Lee , Postdoctoral Fellow, Harvard University.
Polymer Building, Room A312. (NIST Contact: Adam Nolte, 301-975-2895, adam.nolte@nist.gov)


11:00 AM - PROCESS MEASUREMENTS DIVISION SEMINAR: Minimizing Magnetic Errors in Measurements of Small Forces and Torques
Richard Davis , BIPM, France.
221 Bldg, Rm. A366. (NIST Contact: Michael Moldover, 301-975-2459, mmoldover@nist.gov)



ADVANCE NOTICE

8/14/08 10:30 AM - CERAMICS DIVISION SEMINAR: Micro-and Nanomechanical Behavior of Materials
Microelectromechanical systems (MEMS) employ metallic and ceramic thin films in high-performance and safety-critical structural applications with limited understanding of when, why, and how failures will occur. While such a situation is unthinkable for conventional structural applications, the small size of MEMS has allowed many designers to overlook the need to correlate the structure, processing, and mechanical properties of thin films. The primary objective of the Muhlstein Research Group at Penn State is to address this critical problem by exploring the mechanisms of degradation and failure of materials, including the thin films and nanoparticulates used in MEMS. In this presentation we will consider the deformation, fatigue, and fracture behavior of nanostructured silicon nanowires and noble metal films. Particular attention will be given to how the traditional distinctions between ductile and brittle material failure modes become less clear as the length scale of the specimens and/or grain morphologies are reduced below the micron-scale.
Christopher Muhlstein , Penn State University.
Materials Bldg, Rm. B351. (NIST Contact: Robert Cook, 301-975-3207, robert.cook@nist.gov)


8/18/08 10:30 AM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Studying Nanostructures with Light - Massively Parallel Characterization of Individual Carbon Nanotubes
Nanostructures, including single molecules, carbon nanotubes and semiconductor nanowires often exhibit excellent characteristics that are comparable, and in some cases even superior, to the properties of traditional semiconductors. Their electrical and optical properties are determined by the complex interplay between multiple processes occurring in differing length and time scales. Exploring electrical and optical phenomena at this scale therefore requires a tool to investigate these complex, multi-scale processes at the system-wide level. In this talk, I will discuss our approach to investigate the coupling between electronic motion in 1D and 2D nanostructures (nanotubes, nanowires and single layer graphene) and various physical properties, including the electron band map, contact energy barriers, and electron phonon couplings. In particular, we recently developed a novel laser-based microscopy for addressing electrical conductance properties of a large number of individual nanostructures. We applied this technique to successfully characterize a large number of carbon nanotubes grown over a macroscopic area (~millimeters) with a high throughput ( 100/min). Our technique is an important step toward a real-time chemical imaging with which one can monitor electrical conductance change of an array of nanostructures while they are exposed to various chemical reactions.
Jiwoong Park , Department of Chemistry and Chemical Biology, Cornell University.
Bldg. 217, Rm. H107. (NIST Contact: James Liddles, 301-975-6050, james.liddle@nist.gov)


8/19/08 10:30 AM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: The nonlinear and linear phenomena in silicon nanostructures
Silicon photonics has attracted much attention recently because of its potential for providing a monolithically integrated platform for both linear and nonlinear applications. In this presentation, I'll talk about our recent result on the application of silicon photonics, in both linear and nonlinear regime, including the measurement of silicon's nonlinearities, the formation of optical solitons in a silicon waveguide and EO modulator based on silicon photonic crystal and novel EO polymer.
Jidong Zhang , Dept. of ECE, University of Rochester,.
Bldg. 217, Rm. H107. (NIST Contact: Vladimir Aksyuk, 301-975-2867, vladimir.aksyuk@nist.gov)


8/29/08 1:30 PM - CNST ELECTRON PHYSICS GROUP SEMINAR: Cold Rydberg Atoms
Photo-excitation of atoms in laser-cooled gases allows the creation of gases of cold Rydberg atoms. In these gases at higher densities, rich dynamics stem from electric multipole interactions among the Rydberg atoms. For example, interatomic forces between Rydberg atoms cause state-changing collisions which can significantly increase the kinetic energy of the colliding atoms. I will discuss experiments examining these collisions in which internal energy of the Rydberg atoms is converted into kinetic energy. At lower densities, translationally cold Rydberg atoms are well-suited for spectroscopic studies to measure atomic properties. I will present a recently proposed scheme for driving transitions between Rydberg states via a time-dependent ponderomotive interaction between the Rydberg electron and an applied optical field and discuss experimental efforts to realize this new spectroscopic tool.
Brenton Knuffman , Ph.D. Candidate, University of Michigan, Ann Arbor, MI.
Bldg. 217, Rm. H107. (NIST Contact: Jabez McClelland, 301-975-3721, Jabez.McClelland@nist.gov)


9/15/08 1:30 PM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Andreev current induced dissipation in a Superconductor – Normal metal – Superconductor tunnel junction
In the recent years, nano-refrigeration using electron tunneling in hybrid Normal metal - Insulator - Superconductor (N-I-S) junctions has gained increasing attention [1]. Its basic principle is the energy selective tunneling due to the presence of an energy gap in the superconductor density of states. With a sub-gap voltage bias, only the most energetic electrons can tunnel out of the normal metal, leaving behind the electrons with less energy. We have measured with a high resolution the differential conductance of S-I-N-I-S junctions, whose analysis gives us an access to the normal metal electronic temperature as a function of the voltage. A quantitative model is proposed, that includes the electron-phonon coupling and the Kapitza resistance at the interface with the substrate. With this model, we have achieved a thorough description of the charge and heat currents [2]. We have also shown that the normal metal phonon temperature drops significantly below the substrate temperature. At very low temperature (T 200mK) and low bias, the phase coherent Andreev current dominates the quasi-particle current. By analyzing quantitatively the heat balance in the S-I-N-I-S junction, we demonstrate that the Andreev current does carry heat. This thermal contribution heats the normal metal electrons, overriding over a large voltage range the tunneling-based cooling [3].
Sukumar Rajauria , Néel Institute, CNRS and Université Joseph Fourier.
Bldg. 217, Rm. H107. (NIST Contact: James Liddle, 301-975-6050, james.liddle@nist.gov)



MEETINGS ELSEWHERE



8/4 -- MONDAY

No Scheduled Events

8/5 -- TUESDAY

No Scheduled Events

8/6 -- WEDNESDAY

No Scheduled Events

8/7 -- THURSDAY

No Scheduled Events

8/8 -- FRIDAY

No Scheduled Events

ADVANCE NOTICE

No Scheduled Events

TALKS BY NIST PERSONNEL


SANSONETTI, C. (Co-Authors: C.Simien J.Gillaspy ) : PRECISE MEASUREMENT OF THE ISOTOPE SHIFT OF THE LITHIUM D LINES.
International Conf. on Atomic Physics, Univ. of Connecticut, Storrs, CT, 7/29.

NIKOOBAKHT, B. : TOWARDS INDUSTRIAL SCALE FABRICATION OF NANOWIRE-BASED DEVICES.
International Conf. on Electronic Materials, Sydney, Australia, 7/31.

NIKOOBAKHT, B. : STRAIN DRIVEN GROWTH OF HORIZONTAL ZNO NANOWIRES.
Institute for Nanoscale Technology, Sydney, Australia, 8/1.

CONNY, J. : ASSESSING THE INTERNAL STRUCTURE AND COMPOSITION OF CLIMATICALLY-RELEVANT ATMOSPHERIC PARTICLES USING FOCUSED ION BEAM MILLING AND X-RAY MICROANALYSIS.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/4.

DAVIS, J. : MILLI X-RAY FLUORESCENCE X-RAY SPECTRUM IMAGING.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/4.

SCOTT, K. : DETECTING NANOPARTICLES IN CELLS USING FIB-EDS.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/4.

MARINENKO, R. : ELECTRON MICROPROBE QUANTIFICATION OF A TIAL(NBW) ALLOY, NIST SRMS 2061 AND 2062.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/4.

ROSADO-REYES, C. : KINETICS OF THE THERMAL REACTION OF PROPYNE WITH H ATOMS.
32nd International Symposium on Combustion (2008)/McGill University, Montreal, CANADA, 8/5.

HENDRICKS, J. : "NIST CALIBRATION CUSTOMER GAUGE PERFORMANCE FOR LOW PRESSURE METROLOGY".
NCSL Intenational, Orlando, Fla, 8/5.

HERZING, A. : ELEMENTAL MAPPING OF NANOSCALE STRUCTURES IN THE ABERRATION-CORRECTED ANALYTICAL ELECTRON MICROSCOPE.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/5.

RITCHIE, N. : DTSA-II: THE REINCARNATION OF A CLASSIC.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/5.

NEWBURY, D. : COMPOSITIONAL MAPPING BY X-RAY SPECTRUM IMAGING AT 1 MHZ OUTPUT COUNT RATE WITH THE SILICON DRIFT DETECTOR.
2008 Microscopy and Microanalysis Conference, Albuquerque, New Mexico, USA, 8/5.

NEWBURY, D. : PREDICTING VISIBILITY IN ELEMENTAL MAPS DERIVED FROM X-RAY SPECTRUM IMAGES.
2008 Microscopy and Microanalysis Conference, Albuquerque, New Mexico, 8/5.

MEIER, D. : THE LIFE CYCLE OF A METAL OXIDE SENSOR.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/6.

CICERONE, M. : BROADBAND CARS MICROSCOPY - OVERVIEW AND APPLICATIONS.
University of Colorado at Boulder, Boulder, Colorado, USA, 8/6.

DOUGLAS, J. : (POSTER) ENTROPY-ENTHALPY COMPENSATION IN PROTEIN PRESERVATION.
University of Connecticut - Storrs, The Great Divide Lodge, Breckenridge, Colorado, USA, 8/6.

RITCHIE, N. : DTSA-II: A NEW TOOL FOR SIMULATING AND QUANTIFYING EDS SPECTRA-APPLICATION TO DIFFICULT OVERLAPS.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/6.

WONG-NG, W. : DEVELOPMENT OF A STANDARD REFERENCE MATERIAL (SRM) FOR LOW TEMPERATURE SEEBECK COEFFICIENT.
International Conference on Thermoelectrics (ICT 2008), Corvallis, OR, USA, 8/6.

BIENFANG, J. : FREE-SPACE QUANTUM KEY DISTRIBUTION AT GHZ TRANSMISSION RATES.
Black Hat Briefings and Training, Caesars Palace, Las Vegas, NV, 8/7.

ANDERSON, I. : STATISTICAL AND SYSTEMATIC ERRORS IN EFTEM SPECTRAL IMAGING.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/7.

WIGHT, S. : HE ION INDUCED SECONDARY ELECTRON AND BACKSCATTERED ELECTRON IMAGES COMPARED SIDE BY SIDE WITH ELECTRON BEAM INDUCED IMAGES.
Microscopy & Microanalysis 2008 Meeting, Albuquerque Convention Center, Albuquerque, New Mexico, 8/7.

CICERONE, M. : H-BOND NETWORK LIFETIMES AS A DIAGNOSTIC TOOL FOR FREEZE-DRIED FORMULATIONS.
University of Connecticut - Storrs, Great Divide Lodge, Breckenridge, Colorado, USA, 8/7.



ANNOUNCEMENTS


2008 WORLD STANDARDS DAY PAPER COMPETITION
The U.S. standards community will celebrate World Standards Day on Thursday, October 23, 2008, at the Ronald Reagan Building and International Trade Center in Washington, DC. The theme for this year's celebration, "Intelligent and Sustainable Buildings," recognizes the critical role of standards and conformity assessment programs in ensuring safety requirements; facilitating coordination among contractors, builders, engineers, and architects; and incorporating new technologies in design and construction. In conjunction with this year's event, the 2008 World Standards Day sponsors, including NIST will hold the annual paper competition. The 2008 World Standards Day Paper Competition invites papers that use specific examples to show ways that standards and conformity assessment programs are used for intelligent and sustainable buildings. Paper competition winners will be announced and given their awards at the US celebration of World Standards Day. The first place winner will receive a plaque and $2,500. Second and third place winners will receive $1,000 and $500, respectively, along with a certificate. In addition, the winning papers will be published in SES's journal, "Standards Engineering." ELIGIBILITY: The competition is open to U.S.-based individuals in the private sector, government, or academia. Papers may be co-authored. RULES: Entries must be original and not previously published. NIST papers must be processed through WERB or BERB. All paper contest submissions must be received with an official entry form by midnight on August 29, 2008, by the SES Executive Director, 13340 SW 96th Avenue, Miami, Florida, 33176. Complete details and official entry forms are available on the SES website www.ses-standards.org (follow the link for "2008 WSD Paper Competition.") For additional information about the U.S. Celebration of World Standards Day, or to register for the event, please visit www.wsd-us.org.
NIST Contact: Mary Donaldson, 301-975-6197, mary.donaldson@nist.gov


PUBLICATIONS PRINTING DEADLINE AUGUST 14, 2008
August 14 is the last day in FY 2008 to submit materials using FY 2008 funds to the Electronic Information and Publications Group (EIPG) for printing at the Department of Commerce or Government Printing Office. To assure timely processing, bring your Editorial Review Board-approved document or administrative printing job and appropriate paperwork to the EIPG office by close of business on Thursday, August 14, 2008. The office is located on the mezzanine floor of the NIST Research Library in the Admin Building, Room E220. Questions? Ilse Putman, x2780 or Barbara Silcox, x2146.
NIST Contact: Ilse Putman, 301-975-2780, ilse.putman@nist.gov


VISITOR REGISTRATION FOR NIST EVENTS
Because of heightened security at the NIST Gaithersburg site, members of the public who wish to attend meetings, seminars, lectures, etc. must first register in advance. For more information please call or e-mail the "NIST Contact" for the particular event you would like to attend.
NIST Contact: . ., ., .




NIST WEB SITE ANNOUNCEMENTS


No Web Site announcements this week.

For more information, contact Ms. Sharon Hallman, Editor, Stop 2500, National Institute of Standards and Technology, Gaithersburg MD 20899-2500; Telephone: 301-975-TCAL (3570); Fax: 301-926-4431; or Email: tcal@nist.gov.

All lectures and meetings are open unless otherwise stated.

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