NIST Technicalendar February 18 to February 22, 2008 The NIST Technicalendar is issued each Friday. All items MUST be submitted electronically from this web page by 12:00 NOON each Wednesday unless otherwise stated in the NIST Technicalendar. The address for online weekly editions of the NIST Technicalendar and NIST Administrative Calendar is: http://www.nist.gov/tcal/.

In this Issue: Meetings at NIST Meetings Elsewhere Announcements Talks by NIST Personnel NIST Web Site Announcements NIST Administrative Calendar (current)   NIST Vacancy Announcements (current)

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No Scheduled Events

10:30 AM - Towards an Alternative Method of Characterizing Hyperspectral Imagery
11:00 AM - Spatially Resolved Elastic Strains Measured Using Sub-Micrometer X-ray Beams
1:30 PM - Single Crystal Organic Semiconductors
1:30 PM - A Tale of Two Correlated Photons
3:30 PM - Evaluation of Uncertainty Associated With the Avogadro Constant

1:30 PM - Nonlinear Optics in Silicon Photonic Wires: Theory and Application

8:30 AM - Global Perspectives and Strategies for Education about Standardization Workshop
10:30 AM - Diamond Windows on Extreme Conditions
1:30 PM - SOI MEMS Fabrication for Micro-Scale Nanoinstrumentation

10:30 AM - Benjamin Franklin: The First Scientific American

2/18 -- MONDAY

No Scheduled Events

2/19 -- TUESDAY

10:30 AM - OPTICAL TECHNOLOGY DIVISION SEMINAR: Towards an Alternative Method of Characterizing Hyperspectral Imagery
R. Resmini , ..
Bldg. 220, Rm. B343. (NIST Contact: D. Allen, 301-975-3680, david.allen@nist.gov)

11:00 AM - MATERIALS SCIENCE AND ENGINEERING LABORATORY LECTURE SERIES: Spatially Resolved Elastic Strains Measured Using Sub-Micrometer X-ray Beams
The mechanical behavior of device materials during processing, assembly, use and failure is a critical factor for nearly all industrial products. This behavior is generally determined by complex nanoscale processes in which local stresses, defects and crystallographic orientations play a major role. We are collaborating with researchers from Oak Ridge and Argonne National Laboratories to develop a robust measurement capability for measuring elastic strains, defect densities and crystallographic orientations from deeply buried sample volumes smaller than (100 nm)3. This technique was first utilized in 2006 to measure elastic strains within individual dislocation cell interiors in plastically deformed Cu with a spatial resolution of (500 nm)3 [1]. The experimental methods have since been greatly refined and full diffraction line profiles can now be obtained from contiguous buried sample volumes. For example, in a recent experiment, diffracted intensity from a 0.07 um3 sample volume, buried 11 um deep in a deformed Cu sample, was isolated and analyzed. This sample volume contained a single dislocation wall separating two low-dislocation-density regions. Independent line profiles extracted from all three sub-volumes allow quantitative determination of local elastic strain, dislocation density and angular misorientation. The measurement methods discussed above will be described in the context of elucidating the elastic strains within dislocation structures in plastically deformed metals. 1. L. E. Levine, B. C. Larson, W. Yang, M. E. Kassner, J. Z. Tischler, M. A. Delos-Reyes, R. J. Fields, W. Liu, "X-ray Microbeam Measurements of Individual Dislocation Cell Elastic Strains in Deformed Single Crystal Copper," Nature Materials, 5, 619-622 (2006). VTC to Boulder in Building 2, Room 0113
Lyle Levine , Metallurgy Division.
Administration Bldg, Employees Lounge. (NIST Contact: Bill Boettinger, 301-975-6161, william.boettinger@nist.gov)

1:30 PM - SEMICONDUCTOR ELECTRONICS DIVISION SEMINAR: Single Crystal Organic Semiconductors
Single crystal molecular semiconductors present excellent model systems to investigate the charge transport. Among them, pentacene and rubrene are among the most widely studied systems. Crystal quality was investigated for rubrene, where crystals with a small mosaic can be grown. In contrast, pentacene often shows a large mosaic that can be traced to a polymorphic phase transition.
Theo Siegrist , Bell Laboratories.
225 Bldg, Rm. A362. (NIST Contact: David Gundlach, 301-975-2048, david.gundlach@nist.gov)

1:30 PM - OPTICAL TECHNOLOGY DIVISION SEMINAR: A Tale of Two Correlated Photons
Sergey Polyakov , Guest Researcher, NIST.
Physics 221 Bldg, Rm. B145. (NIST Contact: Tina Pipes, 301-975-2316, tina.pipes@nist.gov)

3:30 PM - MATHEMATICAL AND COMPUTATIONAL SCIENCES DIVISION SEMINAR: Evaluation of Uncertainty Associated With the Avogadro Constant
Ruediger Kessel , Mathematical and Computational Sciences Div..
Administration Bldg, Lecture Rm. C. (NIST Contact: Raghu Kacker, 301-975-2109, raghu.kacker@nist.gov) http://math.nist.gov/mcsd/Seminars/2008/2008-02-19-Kessel.html


2/20 -- WEDNESDAY

1:30 PM - CNST NANOFABRICATION RESEARCH GROUP SEMINAR: Nonlinear Optics in Silicon Photonic Wires: Theory and Application
Silicon photonic wires (SPW) are deeply scaled silicon waveguides with transverse dimensions much less than 1 ?m. Integrated silicon photonic devices based on SPW generally have very small footprint and very strong light confinement, which lead to many advantageous physical properties: capability for dispersion engineering, high optical-field density, enhanced effective nonlinearity, and intrinsically short carrier lifetime. First, I will present a comprehensive theoretical model developed to describe pulse dynamics in high-index-contrast and anisotropic waveguides. Third-order nonlinearities, dispersion effects up to the third-order and carrier effects are the three major contributors to the rich pulse dynamics in SPW. In this thesis, various nonlinear optical processes in SPW such as stimulated Raman Scattering (SRS), self-phase modulation (SPM), cross-phase modulation (XPM), modulation instability (MI), and third-order dispersion (TOD) induced soliton-radiation effect are studied theoretically and experimentally. In linear regime, I systematically investigated the "dispersion engineering" in SPW and experimentally demonstrated that SPW could support wavelength-division multiplexing (WDM) transmission at 300 Gb/s for intra-chip optical network. SPM of optical pulses with temporal widths in both picosecond and femtosecond regimes is studied experimentally and theoretically. In the femtosecond regime, the interplay of nonlinear effects, group-velocity-dispersion (GVD) and TOD results in soliton-like pulse propagation in SPW. TOD-induced soliton radiation was demonstrated both numerically and experimentally. XPM is studied using two femtosecond pulses. I investigated the time-resolved phase modulation as a manifestation of the walk-off between these two pulses. XPM is also utilized to optically compress a weak 200-fs pulse propagating in the anomalous GVD regime. MI is a four-wave-mixing (FWM) process that is phase-matched by SPM. We demonstrated that strong MI can be observed in silicon photonic wires with lengths of only a few millimeters using numerical simulation. Our results suggest that MI can be employed to design on-chip optical sources with a highly tunable repetition rate. SRS-based optical amplification in silicon waveguide is a significant functionality. I use the model developed in this thesis to study numerically SRS-mediated pulse dynamics, such as Stokes pulse generation from noise and Raman amplification of Stokes pulse.
Xiaogang Chen , Research Associate - Columbia University, New York, NY.
217 Bldg, Rm. H107. (NIST Contact: Kartik Srinivasan, 301-975-5938, kartik.srinivasan@nist.gov)


2/21 -- THURSDAY

8:30 AM - TECHNOLOGY SERVICES SEMINAR: Global Perspectives and Strategies for Education about Standardization Workshop
This workshop is to promote and support awareness of education about standardization worldwide. The two-day workshop will consist of an overview of activities and programs from standards professionals around the world as well as a discussion of key issues, needs and challenges facing those who are involved in standards education.
John Hill , Sun Microsystems. Additional speakers will be Dr. Richard Forselius, United Technologies; Mr. James Olshefsky, Director, External Relations and many more panelists
101 Bldg, Red Auditorium. (NIST Contact: Erik Puskar, 301-975-8619, erik.puskar@nist.gov) http://www.nist.gov/director/sco/index.cfm?ices-workshop.cfm
Special Assistance Available

10:30 AM - SIGMA XI COLLOQUIUM:: Diamond Windows on Extreme Conditions
Experiments based on diamond anvil technology that began at the National Bureau of Standards half a century ago are now providing unprecedented insight into the nature of materials under extreme conditions. At pressures to above 300 GPa and temperatures from millikelvins to thousands of degrees, new phenomena can be observed in hydrogen and other simple molecular systems; new superconducting, electronic, and magnetic materials are created; and unexpected findings in soft matter and biological systems are observed. These discoveries have been made possible by allied developments in high-pressure synchrotron x-ray and neutron scattering, electrical transport, and magnetic methods, and a variety of laser techniques. Continued development of diamond technology is essential for furthering our understanding of materials under extreme conditions, including methods for producing single crystal diamond by chemical vapor deposition.
Russell Hemley , Geophysical Laboratory, Carnegie Institution, Washington D.C..
Administration Bldg, Lecture Rm. A. (NIST Contact: Bryant Nelson, 301-975-2517, bryant.nelson@nist.gov) http://www.nist.gov/sigmaxi/
Special Assistance Available

1:30 PM - CENTER FOR NANOSCALE SCIENCE AND TECHNOLOGY SEMINAR:: SOI MEMS Fabrication for Micro-Scale Nanoinstrumentation
High aspect ratio microelectromechanical systems (MEMS) can be fabricated from silicon-on-insular (SOI) wafers using multi-step processes based around deep reactive ion etching (DRIE). These mechanisms are generally stiffer, more repeatable, and less susceptible to material variations than their surface micromachined counterparts. This presentation will discuss our experiences in developing SOI MEMS fabrication procedures in the CNST Nanofab for MEMS designed for micro-scale nanoinstrumentation. The details of our process flow will be presented with an emphasis on implementation issues. Several different case examples will be discussed to highlight process variations, including the combination of DRIE and KOH etching, multi-layer SOI devices, and multi-chip devices. The Nanofab Users Information meetings provide an opportunity for users to present work and comments to the Nanofab staff. If you have an idea about a topic you would like to hear more about or if you are interested in presenting to the group please contact. Alexander Liddle, at: alex.liddle@nist.gov Ext. 6050
Jason Gorman , ISD, MEL, NIST.
Bldg. 217, Rm H107. (NIST Contact: Alexander Liddle, 301-975-6050, alex.liddle@nist.gov)


2/22 -- FRIDAY

10:30 AM - NIST COLLOQUIUM SERIES: Benjamin Franklin: The First Scientific American
Famous, fascinating Benjamin Franklin--he would be neither without his accomplishments in science. Franklin was the first person born in the Americas who became internationally celebrated for work in physical science. Although he has been most celebrated for his electrical experiments, he did far more, eventually making major contributions to no fewer than three areas of science, which we would now recognize as the fields of physics, oceanography, and demography. In all three fields, Franklin drew upon his American environment and experiences, though in significantly different ways in each case. Copies of "Benjamin Franklin: In Pursuit of Genius" will be available for review and purchase at the talk.
Joyce Chaplin , History Department, Harvard University.
Administration Building, Red Auditorium. (NIST Contact: Kum Ham, 301-975-4203, kham@nist.gov)
Special Assistance Available


ADVANCE NOTICE

2/25/08 1:30 PM - CNST ELECTRON PHYSICS GROUP SEMINAR: Block-copolymer lithography for patterning perpendicular magnetic nano-islands
Templated block copolymer lithography is a powerful method of fabricating nanostructures which draws on the combined strengths of both top-down and bottom-up methods. This talk will discuss the fabrication and magnetic properties of ordered and disordered perpendicular CoCrPt magnetic islands in a range of sizes (5-15nm thick, 20-30nm diameter) fabricated by this method. Disordered patterns were obtained by annealing a thin spin-coated film of polystyrene-polyferrocenyldimethylsilane (PS-PFS) block copolymer. Ordered arrays were fabricated by a similar method, except the polymer was first templated using a removable topographic template. While topographical templates have previously been used to impose long-range order on block copolymer systems, their use results in residual surface relief on the substrate and therefore in the finished device, which is generally undesirable. To avoid this, a removable template may be used. The pattern can then be transferred into functional materials such as silica, W or magnetic films to make long-range-ordered dot arrays over planar substrates. In particular, magnetic islands fabricated by this method maintain their perpendicular magnetic anisotropy but show increased coercivity (800-1650 Oe) as compared to the unpatterned film (150 Oe). Since the islands are uniaxial and non-interacting (calculated nearest neighbor fields are 50 Oe, Hc), time-scale-dependent magnetic properties could be characterized using Sharrock's approach. The measurements show switching volumes (V*) on the order of the physical volume of the dots (~5000 nm3) suggesting that the dots switch their magnetization coherently and independently of each other. The advantages of this technique will be discussed for large-area self-assembled nanoscale pattern formation, and how it can be applied to the fabrication of various structures including patterned magnetic media, DNA sorting and detection devices or plasmon waveguides.
FILIP ILIEVSKI , RESEARCH ASSISTANT, MASSACHUSETTS INSTITUTE OF TECHNOLOGY.
Bldg. 217, Rm. H107. (NIST Contact: Robert McMichael, 301-975-5121, robert.mcmichael@nist.gov)

2/26/08 7:00 PM - ASQ SOFTWARE SPECIAL INTEREST GROUP AND SOCIETY FOR SOFTWARE QUALITY: Are You Ready for an External Audit?
"Are You Ready for an External Audit?" is about how to determine if you are ready for an audit such as CMMI appraisal or ISO 9001:2000. Carolyn Lincoln will outline a method of mapping your artifacts to the model and then measuring your progress toward readiness for the audit. Carolyn Lincoln has over 20 years of experience in IT, first as a programmer and then a project manager. For the last 10+ years, she has been working on process improvement as an internal consultant and quality assurance manager. Carolyn has participated in CMMI appraisals and ISO 9001:2000 audits and is now working with a project on ISO 20000:2005 certification. Her ASQ certifications are as a Quality Manager, Quality Auditor and Green Belt. She obtained her bachelor's degree from Michigan State University and a master's from Johns Hopkins. There is no cost to attend, but please register by noon Friday, February 22nd, 2008 by contacting Scott Ankrum at ankrums@mitre.org or 703-983-6127. Pizza and soda will be served at 6:30 PM.
Carolyn Lincoln , Quality Assurance Manager.
Administration Bldg, Lecture Rm. C. (NIST Contact: Paul E. Black, 301-975-4794, paul.black@nist.gov)

2/29/08 1:30 PM - QUANTUM ELECTRICAL METROLOGY DIVISION SEMINAR: Quantum Electrical Metrology Division Seminar: Epitaxial Graphene for Nanoelectronics
Abstract: The development of solid-state electronics follows the famous Moore's Law. However, a continuation of Moore's Law demands new materials and even a new paradigm. Graphene, though discovered recently, has been envisioned as a material for next generation electronics owing to its extraordinary properties. Although large portion of studies have been focused on exfoliated graphene, epitaxially grown graphene is seen as "the only viable route towards electronic applications". In this talk, I will discuss the phase coherence phenomena in epitaxial graphene, where we found the evidence for the chiral nature of band electrons. Then, I will show our recent work on making an epitaxial-graphene/graphene-oxide junction and its electrical properties. I will discuss why making such devices is an essential step towards epitaxial graphene electronics.
Dr. Xiao-Song Wu , School of Physics, Georgia Institute of Technology.
220 Bldg, Rm. B165. (NIST Contact: David Newell, 301-975-4228, david.newell@nist.gov)

3/4/08 8:30 AM - COMPUTER SECURITY DIVISION SEMINAR: 7th Symposium on Identity and Trust on the Internet (IDtrust 2008)
Previously known as the PKI R&D Workshop, our new name reflects interest in a broader set of tools and the goal of an identity layer for the Internet. We aim to get practitioners in different sectors together to apply the lessons of real-world deployments to the latest research and ideas on the horizon. Join with experts from NIST, FPKIPA, OASIS, private industry and universities throughout the world to discuss all aspects of identity and trust. Peer reviewed papers focused on Identity Management, Health Care, Public Key Infrastructure and Access Control in Open System will be combined with topical panels during the two and half day event. Two scheduled panels include the Liberty Alliance Identity Assurance Framework and Open Reputation Management Systems. As always, there will be plenty of opportunities for informal networking.

Administration Bldg, Red Auditorium. (NIST Contact: Sara Caswell, 301-975-4634, sara@nist.gov) http://middleware.internet2.edu/idtrust/2008/
Special Assistance Available (teresa.vicente@nist.gov)

3/6/08 9:15 AM - CNST ELECTRON PHYSICS GROUP SEMINAR: The Estimation of Spin-penetration Depth in Ferromagnetic Metals
In the development of spintronics device like a MRAM, the spin-current-induced magnetic reversal is important, because it is expected to reduce the power consumption of device. The penetration depth of transverse component of spin-current is the distance the induced spin relax in ferromagnetic metals and it influence the behavior of spin-current-induced magnetic reversal. In this work, we report the experimental determination of the spin-penetration depth.
Satoshi Yakata , Dr. - Tohoku University, Sendai, yakata2@mlab.apph.tohoku.ac.jp.
217 Bldg, Rm. H107. (NIST Contact: Robert McMichael, 301-975-5121, robert.mcmichael@nist.gov)

3/6/08 10:30 AM - CNST NANOTECHNOLOGY SEMINAR SERIES: Biomimetic Nanoscience: Challenges and Opportunities
The adaptive pressures displayed across the flora and fauna result in a variety of sophisticated nanostructured materials that are perfected to perform multiple biological functions. Our understanding of the underlying principles of their formation provides ample opportunities in the synthesis of next generation, bio-inspired, nanostructured materials. To date, there has been demonstrable progress in materials fabrication harnessing the functional power of biological systems. There is, however, a number of challenges related to the characterization of both biological and synthetic bio-related structures. I will exemplify this point by describing new synthetic strategies and devices that have been inspired by the study of two organisms – echinoderms and sponges. The topics will include self-assembly, control of crystallization, adaptive optical structures, fiber-optics, biomechanics, hybrid materials and novel actuation systems.
Joanna Aizenberg , Professor - Harvard University.
215 Bldg, Rm. C103 - C106. (NIST Contact: Nikolai Zhitenev, 301-975-6039, nikolai.zhitenev@nist.gov)

3/7/08 1:30 PM - CNST ELECTRON PHYSICS GROUP SEMINAR: "Revealing Magnetic Interactions From Single-Atom Magnetization Curves"
The ongoing miniaturization of magnetic devices towards the limit of single atoms calls for appropriate tools to study their magnetic properties. We demonstrate the ability to detect magnetization curves of individual magnetic atoms adsorbed on a metallic substrate using a scanning tunneling microscope with a spin-polarized tip. This enables to map tiny magnetic interactions on the atomic length scale which is evidenced by measuring the RKKY-like indirect exchange between a cobalt adatom and a cobalt nanowire on platinum(111). The method allows for future application to magnetic defects in semiconductors, in order to improve our understanding of diluted magnetic semiconductors. As a first step we will show our detailed investigation of the electronic structure of Mn acceptors in InAs.
Jens Wiebe , Dr./Scientific Staff - University of Hamburg, , jwiebe@physnet.uni-hamburg.de.
217 Bldg, Rm. H107. (NIST Contact: Joseph Stroscio, 301-975-3716, joseph.stroscio@nist.gov)

3/19/08 8:00 AM - POLYMERS DIVISION SEMINAR: Workshop on the Directed Assembly of Functional Materials and Devices
Controlling the placement of nanoscale units into designed structures and patterns through directed assembly processes answers one of the grand challenges of nanotechnology. Innovative approaches using the directed assembly of nanoscale units are being developed to facilitate the nanofabrication of new materials and applications that can incorporate biological functionality, or devices such as flexible, large-area electronics devices. Directed assembly methods provide an opportunity to overcome limitations of traditional semiconductor processing; specifically, the small materials set with which to work, restriction to two dimensional patterning, and exorbitant equipment costs. Moving directed assembly from research demonstrations to viable manufacturing processes is difficult because it requires control over the simultaneous transport, placement, and interactions of a potentially large set of nanoscale units with different size, shape, and chemical functionality. New measurements and process control methods must be developed to enable successful implementation of this groundbreaking technology. This workshop will bring together leading researchers and stakeholders from industry, government, and academia that are actively engaged in research and development of the directed assembly of nanoparticles into functional materials and devices. Through invited presentations and focused discussions, the workshop will explore and identify the most pressing measurement and technological needs to advance directed assembly as a viable manufacturing method for future nanotechnology applications.
Heiko Wolf , International Business Machines,. Haw Yang, Christopher Murray, Oleg Gang, Babak Parviz, Dan Herr, Mike Natan, Mike Bevan, Abe Stroock, Sharon Glotzer, Kate Stebe, Chong Ahn, CJ Kim, Hiroshi Matsui, Alex Tkachenko
AML, 215 Bldg, Rm. C103/106. (NIST Contact: Steven Hudson, 301-975-6579, steven.hudson@nist.gov) http://polymers.nist.gov/Directed_Assembly/Directed_Assembly_Workshop2.htm
Rooms are wheel chair accessible.

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MEETINGS ELSEWHERE


2/18 -- MONDAY

No Scheduled Events

2/19 -- TUESDAY

11:00 AM - CARNEGIE INSTITUTION OF WASHINGTON/GEOPHYSICAL LAB. SEMINAR: CHEMISTRY AND PHYSICS UNDER EXTREME CONDITIONS: CHARACTERIZATION OF KNOWN AND NOVEL SYSTEMS, ELASTICITY OF METALS AND MINERALS, SHOCK-LOADING COMBINED WITH PRECOMPRESSION
J Crowhurst , Lawrence Livermore NL.
Bldg, Rm..
Greenewalt Bldg., GL-DTM Grounds, Carnegie Institution of Washington, DC. (NIST Contact: . ., 202-478-8900, seminar@lists.ciw.edu)



2/20 -- WEDNESDAY

11:00 AM - CARNEGIE INSTITUTION OF WASHINGTON/GEOPHYSICAL LAB. SEMINAR: TBA
J Janik , Florida State U.
Bldg, Rm..
Greenewalt Bldg., GL-DTM Grounds, Carnegie Institution of Washington, DC. (NIST Contact: . ., 202-478-8900, seminar@lists.ciw.edu)



2/21 -- THURSDAY

No Scheduled Events

2/22 -- FRIDAY

No Scheduled Events

ADVANCE NOTICE

No Scheduled Events

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TALKS BY NIST PERSONNEL

RICHARDSON, M. : LAYERED DOUBLE HYDROXIDE-EPOXY NANOCOMPOSITES: THE ROLE OF INTERFACIAL ADHESION AND ANION EXCHANGE CAPACITY ON NANOCOMPOSITE PERFORMANCE.
Adhesion Society Meeting, Austin, TX, 2/18.

KARIM, A. : GUIDED SELF-ASSEMBLY OF BLOCK COPOLYMER FILMS.
International Conference POLYCHAR 2008, Lucknow, India, 2/18.

KIM, J. : THE IMPACT OF INTERFACIAL ADHESION ON THE STRAIN TO FAILURE OF MONTMORILLONITE/EPOXY NANOCOMPOSITES.
Adhesion Society Meeting, Austin, TX, 2/18.

RICHARDSON, M. : DEFECT SITE FUNCTIONALIZATION: AN APPROACH FOR PROMOTING ADHESION IN CARBON NANOPARTICLE/EPOXY NANOCOMPOSITES.
Adhesion Society Meeting, Austin, TX, 2/19.

BIENFANG, J. : BROADBAND QUANTUM KEY DISTRIBUTION.
OSA, OSA Headquarters, Dupont Circle, Washington DC, 2/19.

NGUYEN, T. (Co-Authors: X.Gu L.Chen ) Martin, J. : CONTRAST MECHANISM OF NANOCHEMICAL MAPPING WITH AFM IN HUMID AIR.
31th Adhesion Society Meeting, Austin, Texas, 2/20.

WU, W. : RECENT ADVANCEMENT IN THE DEVELOPMENT OF CD-SAXS.
AMAG Meeting, SEMATECH, Monterey, CA, 2/21.

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ANNOUNCEMENTS

VISITOR REGISTRATION FOR NIST EVENTS
Because of heightened security at the NIST Gaithersburg site, members of the public who wish to attend meetings, seminars, lectures, etc. must first register in advance. For more information please call or e-mail the "NIST Contact" for the particular event you would like to attend.
NIST Contact: . ., ., .

IC ANNOUCEMENT FOR FY2008 POSTDOCTORAL RESEARCH FELLOWSHIPS
The Intelligence Community(IC) has released its Broad Area Announcement (BAA) for FY 2008 Postdoctoral Research Fellowships. The mission of the IC Postdoctoral Research Fellowship Program is to establish long-term relationships and mentoring of postdoctoral researchers and to provide research institutes with an understanding of the Intelligence Community's research requirements. Since 2000 the program has promoted basic research in support of broad IC needs, simultaneously facilitating communication and connections between members of scientific and the IC communities. Instructions for Universities, Industry and non-profits are available on-line but the submission requirements for US government agencies is quite different. Please note that NIST applicants do not apply through grants.gov. As in the past, proposals must be sent to OIAA to forward to the IC coordinator. Detailed instructions for NIST are provided at: http://www-i.nist.gov/oiaa/ic_postdoc.pdf In order to submit on time from NIST, OIAA requests receipt of proposals to our office by COB 5 March 2008.
NIST Contact: Susan Heller-Zeisler, 301-975-3111, szeisler@nist.gov

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NIST WEB SITE ANNOUNCEMENTS

No Web Site announcements this week.

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For more information, contact Ms. Sharon Hallman, Editor, Stop 2500, National Institute of Standards and Technology, Gaithersburg MD 20899-2500; Telephone: 301-975-TCAL (3570); Fax: 301-926-4431; or Email: tcal@nist.gov.

All lectures and meetings are open unless otherwise stated.

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